Light-emitting diode and method for fabrication thereof

A method for the fabrication of a light-emitting diode that includes a compound semiconductor layer containing a p-n junction-type light-emitting part, an electric conductor disposed as bonded on the compound semiconductor layer and formed of an electrically conductive material optically transparent to light emitted from the light-emitting part, a high resistance layer interposed between the compound semiconductor layer and the electric conductor and possessing higher resistance than the electric conductor, and a second compound semiconductor layer of a type of conductivity opposite to the electric conductor, which layer is bonded to a surface of the high resistant layer opposite to a side thereof bonded to the electric conductor;

• wherein a breakdown voltage of a bond formed of the electric conductor, the high resistance layer and the second compound semiconductor layer during a flow of an electric current of 10 μA exceeds 2 times a forward voltage of the light emitting diode during a flow of an electric current of 10 μA and smaller than ½ of a reverse voltage of the light-emitting diode during a flow of an electric current of 10 μA,
• the method comprising the step of irradiating a surface side of the compound semiconductor layer bonded to the electric conductor or a surface side of the electric conductor bonded to the compound semiconductor layer with an ion beam or a neutral beam, thereby forming the high resistance layer.