Method for fabricating a semiconductor device and a substrate processing apparatus
AssigneeHitachi Kokusai Electric Inc.
InventorsHirohisa Yamazaki, Takaaki Noda
Life of this patent
Estimating the term…
Abstract
A substrate processing apparatus for forming a boron doped silicon-germanium film on one or more substrates in a reaction furnace of a low pressure CVD apparatus uses a mixture gas of GeH4 and SiH4 as a reaction gas, and BCl3 as a doping gas. The substrate processing apparatus includes a plurality of gas outlets for supplying GeH4 at different locations in the reaction tube and a doping gas line for supplying BCl3 at least at an upstream side of gas flow in the reaction tube.
Claims10
A semiconductor device fabricating method for forming a boron doped silicon-germanium film on one or more substrates in a reaction furnace of a low pressure CVD apparatus, comprising the steps of:
- loading said one or more substrates into the reaction furnace;
- supplying GeH4 and SiH4 as a reaction gas to the reaction furnace;
- and
- supplying BCl3 as a doping gas to the reaction furnace.
A substrate processing apparatus for forming a boron doped silicon-germanium film on a wafer, comprising:
- a reaction tube in which at least one substrate is processed;
- a heater for heating said at least one substrate in the reaction tube;
- a first gas supplying line for supplying SiH4 to the reaction tube;
- a second gas supplying line for supplying GeH4 to the reaction tube;
- and
- a third gas supplying line for supplying BCl3 to the reaction tube.
Dependencies are inferred from the claim text.