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US 8,217,405 B2Granted
Light-emitting diode and method for fabrication thereof
AssigneeShowa Denko K.K.
InventorsRyouichi Takeuchi, Atsushi Matsumura, Takashi Watanabe
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AssigneeShowa Denko K.K.
InventorsRyouichi Takeuchi, Atsushi Matsumura, Takashi Watanabe
Estimating the term…
A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage.
A light-emitting diode comprising a compound semiconductor layer including a p-n junction-type light-emitting part, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in a middle between the compound semiconductor layer and the electric conductor,
A method for the fabrication of a light-emitting diode that includes a compound semiconductor layer containing a p-n junction-type light-emitting part, an electric conductor disposed as bonded on the compound semiconductor layer and formed of an electrically conductive material optically transparent to light emitted from the light-emitting part, and a high resistance layer interposed between the compound semiconductor layer and the electric conductor and possessing higher resistance than the electric conductor wherein the high resistance layer is formed of an amorphous material or a polycrystalline material containing an amorphous substance and has a thickness of 0.5 nm or more and 10 nm or less, the method comprising the step of irradiating a surface side of the compound semiconductor layer bonded to the electric conductor or a surface side of the electric conductor bonded to the compound semiconductor layer with an ion beam or a neutral beam, thereby forming the high resistance layer.
Dependencies are inferred from the claim text.