Y10S 438/931
Silicon carbide semiconductor
Y10S438/931 (Silicon carbide semiconductor) appears on 509 US grants and 252 published applications in this corpus.
Search patents in Y10S- Granted patents
- 509
- Published applications
- 252
- Assignees
- 197
- Inventors
- 692
- Latest grant
- 23 May 2017
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 5 | 0 |
| 1985 | 3 | 0 |
| 1986 | 4 | 0 |
| 1987 | 0 | 0 |
| 1988 | 4 | 0 |
| 1989 | 7 | 0 |
| 1990 | 7 | 0 |
| 1991 | 14 | 0 |
| 1992 | 3 | 0 |
| 1993 | 11 | 0 |
| 1994 | 18 | 0 |
| 1995 | 15 | 0 |
| 1996 | 15 | 0 |
| 1997 | 19 | 0 |
| 1998 | 18 | 0 |
| 1999 | 27 | 0 |
| 2000 | 27 | 0 |
| 2001 | 19 | 9 |
| 2002 | 23 | 18 |
| 2003 | 23 | 27 |
| 2004 | 35 | 23 |
| 2005 | 17 | 33 |
| 2006 | 25 | 29 |
| 2007 | 19 | 17 |
| 2008 | 15 | 19 |
| 2009 | 24 | 20 |
| 2010 | 24 | 19 |
| 2011 | 27 | 8 |
| 2012 | 19 | 10 |
| 2013 | 6 | 12 |
| 2014 | 10 | 4 |
| 2015 | 15 | 4 |
| 2016 | 2 | 0 |
| 2017 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor transistor device with dopant profile23 May 2017US 9,660,049 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon carbide switching devices including P-type channels24 Jan 2017US 9,552,997 B2Cree, Inc.
- Methods of processing semiconductor wafers having silicon carbide power devices thereon24 May 2016US 9,349,596 B2Cree, Inc.
- Device with a single crystal diamond substrate with a buried electrically conducting layer22 Mar 2016US 9,295,152 B2The United States of America as represented by the Secretary of the Navy
- Silicon carbide devices having smooth channels22 Sep 2015US 9,142,663 B2Cree, Inc.
- Semiconductor transistor device with dopant profile3 Sep 2015US 2015/0249141 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Device with a Single Crystal Diamond Substrate with a Buried Electrically Conducting Layer6 Aug 2015US 2015/0223331 A1The Government of the United States of America, as represented by the Secretary of the Navy
- Transistor device21 May 2015US 2015/0137146 A1Semiconductor Manufacturing International Corp.
- Silicon Carbide Devices Having Smooth Channels29 Jan 2015US 2015/0028354 A1Cree, Inc.
- Semiconductor device and method for manufacturing same25 Dec 2014US 2014/0374774 A1Panasonic Corporation
Most cited
By later US patents
- Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors721US 5,281,274 AThe United States of America as represented by the Secretary of the Navy · 1994
- Apparatus for and a method of growing thin films of elemental semiconductors671US 5,225,366 AThe United States of America as represented by the Secretary of the Navy · 1993
- Silicon carbide semiconductor device and method for producing the same641US 7,829,416 B2Panasonic Corporation · 2010
- Post-deposition treatment to enhance properties of Si-O-C low k films526US 7,326,657 B2APPLIED Materials.Inc. · 2008
- Post-deposition treatment to enhance properties of Si-O-C low K films526US 8,143,174 B2APPLIED Materials.Inc. · 2012