Silicon carbide devices having smooth channels
AssigneeCree, Inc.
InventorsMrinal K. Das, Michael Laughner
Life of this patent
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Abstract
Methods of forming silicon carbide power devices are provided. An n− silicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the n− silicon carbide layer. A buried region of p+ silicon carbide is provided on the p-type silicon carbide well region. An n+ region of silicon carbide is provided on the buried region of p+ silicon carbide. A channel region of the power device is adjacent the buried region of p+ silicon carbide and the n+ region of silicon carbide. An n− region is provided on the channel region and a portion of the n− region is removed from the channel region so that a portion of the n− region remains on the channel region to provide a reduction in a surface roughness of the channel region.
Claims8
A silicon carbide power device, comprising:
- an n-type silicon carbide region;
- a p-type silicon carbide region adjacent the n-type silicon carbide region;
- and
- an n−silicon carbide region that provides a reduction in surface roughness of a channel region of the silicon carbide power device,
- wherein the n-type silicon carbide region and p-type silicon carbide region include steps of up to several hundred angstroms in height on surfaces thereof;
- and
- wherein the n− silicon carbide region is provided on the steps on the surfaces of the n-type silicon carbide region and p-type silicon carbide region, the presence of the n− silicon carbide region on the steps providing the reduction in surface roughness of the channel region of the silicon carbide power device.
Dependencies are inferred from the claim text.