Transistor device

A transistor device comprising:

• a semiconductor substrate;
• a confining layer disposed on the semiconductor substrate and configured to confine impurity ions diffused from the semiconductor substrate to the confining layer;
• a well region including the confining layer and a portion of the semiconductor substrate, wherein the well region is ion-implanted;
• an epitaxial silicon layer disposed on the confining layer that is ion implanted;
• a gate structure disposed on the epitaxial silicon layer, wherein a portion of the epitaxial silicon layer includes an intrinsic channel region;
• a germanium-silicon carbide (GeSiC) implantation region in the epitaxial silicon layer on both sides of the gate structure;
• and
• a source region and a drain region each including a portion of each of:
• the GeSiC implantation region in the epitaxial silicon layer, the ion-implanted confining layer, and the portion of the semiconductor substrate in the well region.