Y10S 438/93
Ternary or quaternary semiconductor comprised of elements from three different groups
Official title: Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V
Y10S438/93 (Ternary or quaternary semiconductor comprised of elements from three different groups) appears on 89 US grants and 24 published applications in this corpus.
Search patents in Y10S- Granted patents
- 89
- Published applications
- 24
- Assignees
- 56
- Inventors
- 165
- Latest grant
- 22 Sep 2015
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 3 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 3 | 0 |
| 1993 | 2 | 0 |
| 1994 | 4 | 0 |
| 1995 | 10 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 5 | 0 |
| 1999 | 4 | 0 |
| 2000 | 3 | 0 |
| 2001 | 4 | 0 |
| 2002 | 4 | 7 |
| 2003 | 7 | 3 |
| 2004 | 2 | 1 |
| 2005 | 2 | 4 |
| 2006 | 2 | 4 |
| 2007 | 0 | 0 |
| 2008 | 3 | 1 |
| 2009 | 2 | 1 |
| 2010 | 2 | 1 |
| 2011 | 3 | 2 |
| 2012 | 1 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- III-nitride monolithic IC22 Sep 2015US 9,142,637 B2International Rectifier Corporation
- Multiband semiconductor compositions for photovoltaic devices6 Mar 2012US 8,129,615 B2The Regents of the University of California
- Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same25 Oct 2011US 8,044,379 B2Hitachi Chemical Company, Ltd.
- Reconditioned substrates for fabricating compound material wafers28 Jun 2011US 7,968,909 B2S. O. I. Tec Silicon on Insulator Technologies
- Structure and method for III-nitride monolithic power IC22 Feb 2011US 7,892,938 B2International Rectifier Corporation
- III-Nitride Monolithic IC16 Jun 2011US 2011/0143517 A1International Rectifier Corporation
- Methods for fabricating compound material wafers3 Mar 2011US 2011/0049528 A1S.O.I. Tec Silicon on Insulator Technologies
- Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same18 Mar 2010US 2010/0065819 A1Hitachi Chemical Company, Ltd.
- Methods for fabricating compound material wafers30 Jul 2009US 2009/0191719 A1S.O.I. Tec Silicon on Insulator Technologies
- Multiband semiconductor compositions for photovoltaic devices14 Aug 2008US 2008/0190484 A1The Regents of the University of California
Most cited
By later US patents
- Process of forming a compound semiconductive material134US 4,581,108 AAtlantic Richfield Company · 1986
- Process for making thin film solar cell126US 5,045,409 AAtlantic Richfield Company · 1991
- Group I-III-VI.sub.2 semiconductor films for solar cell application111US 5,028,274 AInternational Solar Electric Technology, Inc. · 1991
- Ultraviolet light emitting diode110US 6,664,560 B2Cree, Inc. · 2003
- Method for preparing chalcopyrite-type compound105US 5,445,847 AMatsushita Electric Industrial Co., Ltd. · 1995