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US 2010/0065819 A1Published application
Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same
AssigneesHitachi Chemical Company, Ltd., Hitachi Chemical Research Center, Inc.
InventorYongxian Wu
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Abstract
A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an appropriate length of time. Related structures and devices composed at least in part from silicon nanowires are also described.
Claims45
A method of producing silicon nanowires by electrochemically etching a silicon substrate, the method comprising:
- providing the substrate in the form of a doped silicon material;
- formulating an etching solution comprising ethanol and hydrofluoric acid, the etching solution comprising 1-38% hydrofluoric acid, by volume;
- applying a current density of 1-2,000 mA/cm2;
- and
- electrochemically etching the substrate for 1 second-24 hours.
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A structure comprising:
- well-aligned, densely packed bundles of silicon nanowires, each nanowire having a diameter of less than about 50 nm and a length of 10 nm-100 microns, the dimensions of the nanowires being substantially uniform, the structure consisting essentially of silicon and oxygen, or compounds thereof, and the structure having a porosity of at least 80%.
A structure comprising:
- a plurality of silicon nanowires, each nanowire comprising an outer surface;
- and
- one or more interconnecting silicon films;
- wherein the outer surfaces of the nanowires and the one or more films are oxidized thereby defining an alternating conductor-insulator structure.
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Dependencies are inferred from the claim text.