Methods for fabricating compound material wafers
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorFrederic Dupont
Life of this patent
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Abstract
Reconditioned donor substrates that include a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface; and an additional layer deposited upon the opposite surface of the remainder substrate to increase its thickness and to form the reconditioned substrate. The reconditioned substrate is recycled as a donor substrate for fabricating compound material wafers and is typically made from gallium nitride donor substrates.
Claims18
A gallium nitride (“GaN”) donor substrate having a nitrogen (“N”) surface and a gallium (“Ga”) surface, with the Ga surface having an added layer provided thereon.
A reconditioned donor substrate comprising a remainder substrate having a first surface wherein a layer of the donor substrate has been detached and an opposite surface upon which an added layer is provided.
A method for preparing a reconditioned donor substrate which comprises detaching a layer from one side of an initial donor substrate to provide a remainder substrate having a detached surface and providing an added layer on the surface on the opposite side of the donor substrate.
Dependencies are inferred from the claim text.