Multiband semiconductor compositions for photovoltaic devices
AssigneeThe Regents of the University of California
InventorsWladyslaw Walukiewicz, Kin Man Yu, Junqiao Wu
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Abstract
The highly mismatched alloy Zn1-yMnyOxTe1-x, 0≦y<1 and 0<x<1 and other Group II-IV-Oxygen implanted alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.
Claims6
A multi-band semiconductor film comprising a highly mismatched alloy GaNxAs1-x-yPy wherein 0.3≦y≦0.5 and 0.01≦x≦0.04, comprising an intermediate N derived band to expand absorption edges of two conduction subbands for maximum solar cell efficiency.
Dependencies are inferred from the claim text.