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US 2009/0191719 A1Published application
Methods for fabricating compound material wafers
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorFrederic Dupont
Life of this patent
Estimating the term…
Abstract
Methods are disclosed for preparing a reconditioned donor substrate by providing a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface; and depositing an additional layer onto the opposite surface of the remainder substrate to increase its thickness and to form a reconditioned substrate. The reconditioned substrate is recycled as a donor substrate for fabricating compound material wafers.
Claims13
A method for preparing a reconditioned donor substrate, which comprises:
- providing a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface;
- and
- depositing an additional layer onto the opposite surface of the remainder substrate to increase its thickness and to form a reconditioned substrate for recycling as a donor substrate.
Dependencies are inferred from the claim text.