Process for making thin film solar cell
AssigneeAtlantic Richfield Company
InventorsChris Eberspacher, James H. Ermer, Kim W. Mitchell
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Abstract
A method of making group I-III-VI compound semiconductors such as copper indium diselenide for use in thin film heterojunction photovoltaic devices. A composite film of copper, indium, and possibly other group IIIA elements, is deposited upon a substrate. A separate film of selenium is deposited on the composite film. The substrate is then heated in a chamber in the presence of a gas containing hydrogen to form the compound semiconductor material.
Claims10
A method for making a semiconducting film comprising:
- depositing a composite film of copper and indium onto a substrate,
- depositing a film of selenium onto the composite copper and indium film, and
- heating the substrate in the presence of a hydrogen containing gas for a time and at a temperature sufficient to cause interdiffusion of copper, indium and selenium to form a semiconductor of the class CuInSe.sub.2.
A semiconducting thin film formed on a substrate by the method comprising:
- depositing a composite film of copper and indium on a substrate, said film having an atomic copper to indium ratio of about one,
- depositing a film of selenium on said composite copper indium film, said selenium film thickness selected to provide an atomic ratio of selenium to copper and indium of less than one, and
- heating said substrate with said composite copper indium film and said selenium film in the presence of H.sub.2 S gas for a time and at a temperature sufficient to cause interdiffusion of copper, indium, selenium and sulfur to form a semiconductor of the class CuInSe.sub.2-x S.sub.x where x is less than two.
A method for making a semiconducting film comprising:
- depositing onto a substrate a composite film of copper, indium and at least one element selected from the group consisting of gallium and aluminum,
- depositing a film of selenium onto said composite film, and
- heating the substrate in the presence of a hydrogen containing gas for a time and at a temperature sufficient to cause interdiffusion of selenium and the elements comprising the composite film.
A semiconducting thin film formed on a substrate by the method comprising:
- depositing onto a substrate a composite film of copper, indium and at least one element selected from the group consisting of gallium and aluminum, said film having an atomic ratio of copper to the other elements of about one,
- depositing a film of selenium on said composite film, said selenium film thickness selected to provide an atomic ratio of selenium to the elements comprising the composite film of less than one, and
- heating said substrate with said composite film and said selenium film in the presence of H.sub.2 S gas for a time and at a temperature sufficient to cause interdiffusion of selenium, sulfur and the elements comprising the composite film.
Dependencies are inferred from the claim text.