Group I-III-VI.sub.2 semiconductor films for solar cell application
AssigneeInternational Solar Electric Technology, Inc.
InventorsBulent M. Basol, Vijay K. Kapur
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Abstract
This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.
Claims28
A method of forming a solar cell comprising:
- depositing onto a substrate an intermediate layer consisting essentially of one or more elements selected from the group consisting of Te, Sn, and Pb;
- depositing a Group I-III-VI.sub.2 semiconductor layer onto said intermediate layer,
- wherein said intermediate layer is deposited directly onto said substrate and wherein said substrate may be a conductive material or have a conductive coating thereon.
A method of forming a solar cell comprising:
- depositing onto a substrate an intermediate layer consisting essentially of one or more elements selected from the group consisting of Te, Sn, and Pb;
- depositing a Group I-III-VI.sub.2 semiconductor layer onto said intermediate layer, said Group I-III-VI.sub.2 semiconductor layer containing elemental components selected from the group consisting of Cuy, Ag, Al, Ga, In, Tl, S, Te and Se,
- wherein said intermediate layer is deposited directly onto said substrate and wherein said substrate may be a conductive material or have a conductive coating thereon, and wherein at least two of said elemental components of the Group I-III-VI.sub.2 semiconductor are deposited onto the intermediate layer, and wherein the substrate and all the layers deposited thereon are annealed at a temperature range of from about 350.degree. C. to about 600.degree. C.
A solar cell comprising:
- a substrate;
- an intermediate layer deposited onto said substrate, said intermediate layer consisting essentially of Te, Sn, and Pb;
- a Group I-III-VI.sub.2 semiconductor layer deposited onto said intermediate layer,
- wherein said intermediate layer is deposited directly onto said substrate and wherein said substrate may be a conductive material or have a conductive coating thereon.
A solar cell as set forth in claim 17 wherein said intermediate layer consists essentially of Te.
A solar cell comprising a substrate;
- an intermediate layer deposited onto said substrate, said intermediate layer consisting essentially of one or more elements selected from the group consisting of Te, Sn, and Pb;
- a Group I-III-VI.sub.2 semiconductor layer deposited onto said intermediate layer, said Group I-III-VI.sub.2 semiconductor layer containing elemental components selected from the group consisting of Cu, Ag, Al, Ga, In, Tl, S, Te, and Se.
- wherein said intermediate layer is deposited directly onto said substrate and wherein said substrate may be a conductive material or have a conductive coating thereon and wherein at least two of said elemental components of the Group I-III-VI.sub.2 semiconductor are deposited onto the intermediate layer, and wherein the substrate and all the layers deposited thereon are annealed at a temperature range of from about 350.degree. C. to about 600.degree. C.
Dependencies are inferred from the claim text.