Y10S 438/906
Cleaning of wafer as interim step
Y10S438/906 (Cleaning of wafer as interim step) appears on 726 US grants and 354 published applications in this corpus.
Search patents in Y10S- Granted patents
- 726
- Published applications
- 354
- Assignees
- 244
- Inventors
- 1,435
- Latest grant
- 28 Jul 2020
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 4 | 0 |
| 1986 | 4 | 0 |
| 1987 | 5 | 0 |
| 1988 | 3 | 0 |
| 1989 | 6 | 0 |
| 1990 | 4 | 0 |
| 1991 | 11 | 0 |
| 1992 | 7 | 0 |
| 1993 | 15 | 0 |
| 1994 | 18 | 0 |
| 1995 | 8 | 0 |
| 1996 | 19 | 0 |
| 1997 | 13 | 0 |
| 1998 | 39 | 0 |
| 1999 | 54 | 0 |
| 2000 | 47 | 0 |
| 2001 | 53 | 33 |
| 2002 | 50 | 54 |
| 2003 | 65 | 55 |
| 2004 | 67 | 52 |
| 2005 | 41 | 27 |
| 2006 | 33 | 40 |
| 2007 | 28 | 26 |
| 2008 | 21 | 17 |
| 2009 | 22 | 16 |
| 2010 | 30 | 16 |
| 2011 | 21 | 9 |
| 2012 | 17 | 2 |
| 2013 | 3 | 0 |
| 2014 | 4 | 3 |
| 2015 | 3 | 3 |
| 2016 | 1 | 1 |
| 2017 | 0 | 0 |
| 2018 | 1 | 0 |
| 2019 | 0 | 0 |
| 2020 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Mechanisms for cleaning substrate surface for hybrid bonding28 Jul 2020US 10,727,097 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods and materials for making a monolithic porous pad cast onto a rotatable base7 Aug 2018US 10,040,226 B2Entegris, Inc.
- Photoresist removal9 Feb 2016US 9,256,134 B2Advanced Technology Materials, Inc.
- Contact clean by remote plasma and repair of silicide surface29 Sep 2015US 9,147,578 B2APPLIED Materials.Inc.
- Mechanisms for cleaning substrate surface for hybrid bonding26 May 2015US 9,040,385 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Photoresist removal2 Jun 2016US 2016/0152926 A1Advanced Technology Materials, Inc.
- Mechanisms for cleaning substrate surface for hybrid bonding27 Aug 2015US 2015/0243537 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods and materials for making a monolithic porous pad cast onto a rotatable base2 Jul 2015US 2015/0183141 A1Entegris, Inc.
- Mechanisms for cleaning substrate surface for hybrid bonding29 Jan 2015US 2015/0031189 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Photoresist removal31 Jul 2014US 2014/0213498 A1Advanced Technology Materials, Inc.
Most cited
By later US patents
- Method for removing a film on a silicon layer surface421US 5,022,961 ADainippon Screen Mfg.Co., Ltd. · 1991
- Low-temperature in-situ dry cleaning process for semiconductor wafer359US 5,403,434 ATexas Instruments Incorporated · 1995
- Method of making a semiconductor device having planarized insulating layer310US 5,976,973 AFujitsu Limited · 1999
- Method of producing semiconductor device having buried contact structure297US 5,804,505 ANEC Corporation · 1998
- Etching of silicon dioxide selectively to silicon nitride and polysilicon292US 5,505,816 AInternational Business Machines Corporation · 1996