Photoresist removal

A cleaning solution comprising at least one strong base, at least one oxidant, and at least one polar solvent, wherein said at least one strong base comprises a species having the formula NR1R2R3R4OH, where R1, R2, R3, and R4 are each one of hydrogen, alkyl or substituted alkyl groups, wherein said at least one oxidant comprises peroxides, amine-N-oxides, perborate salts, persulfate salts, percarbonate salts, and combinations thereof, and wherein said at least one polar solvent comprises a polar species selected from the group consisting of water, an alcohol, ethylene glycol, propylene glycol, glycol ethers thereof, an amide, and a carbonate, wherein said solution is useful for removing post-etch photoresist residue from a semiconductor substrate having same thereon.

A method to remove post-etching photoresist residue from a semiconductor substrate comprising contacting the semiconductor substrate with a cleaning solution for a sufficient amount of time to effect substantial cleaning of the semiconductor substrate, wherein the cleaning solution comprises at least one strong base, at least one oxidant, and at least one polar solvent, wherein said at least one strong base comprises a species having the formula NR1R2R3R4OH, where R1, R2, R3, and R4 are each one of hydrogen, alkyl or substituted alkyl groups, wherein said at least one oxidant comprises peroxides, amine-N-oxides, perborate salts, persulfate salts, percarbonate salts, and combinations thereof, and wherein said at least one polar solvent comprises a polar species selected from the group consisting of water, an alcohol, ethylene glycol, propylene glycol, glycol ethers thereof, an amide, and a carbonate.