Photoresist removal
AssigneeAdvanced Technology Materials, Inc.
InventorsDavid W. Minsek, Melissa K. Rath, David D. Bernhard, Thomas H. Baum
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Abstract
Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.
Claims16
A cleaning solution comprising tetramethylammonium hydroxide, an amine-N-oxide, and a polar solvent, wherein said solution is useful for removing post-etch photoresist residue from a semiconductor substrate having same thereon.
A method to remove post-etching photoresist residue from a semiconductor substrate comprising contacting the semiconductor substrate with a cleaning solution for a sufficient amount of time to effect substantial cleaning of the semiconductor substrate, wherein the cleaning solution comprises tetramethylammonium hydroxide, an amine-N-oxide, and a polar solvent.
Dependencies are inferred from the claim text.