Method of making a semiconductor device having planarized insulating layer

A method of manufacturing a semiconductor device comprising the steps of:

• forming a wiring layer on a semiconductor substrate;
• forming a wiring pattern by dry etching the wiring layer using a resist pattern as a mask;
• immersing the wiring pattern in amine containing liquid to remove deposition residues formed during the dry etching;
• processing the wiring pattern having been immersed in the amine containing liquid with fluid containing at least one from the group consisting of fluoride ion, hydroxide ion, oxygen radical, oxygen ion, and choline but not containing amine and being capable of removing deposition residues;
• forming a conformal insulating layer on the processed wiring pattern;
• and
• forming an insulating layer having a planarizing function on the conformal insulating layer by CVD.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a wiring layer on a semiconductor substrate, the wiring layer comprising lamination of a barrier metal layer and a main wiring layer;
• forming a wiring pattern by dry etching the wiring layer using a resist pattern as a mask;
• immersing the wiring pattern in amine containing liquid to remove deposition residues formed during the dry etching;
• processing the wiring pattern having been immersed in the amine containing liquid with fluid not containing amine and being capable of removing deposition residues;
• forming a conformal insulating layer on the processed wiring pattern;
• and
• forming an insulating layer having a planarizing function on the conformal insulating layer by CVD.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a wiring layer on a semiconductor substrate;
• forming a wiring pattern by dry etching the wiring layer using a resist pattern as a mask;
• immersing the wiring pattern in amine containing liquid to remove deposition residues formed during the dry etching;
• processing the wiring pattern having been immersed in the amine containing liquid with fluid not containing amine and being capable of removing deposition residues, said processing including a step of immersing the wiring pattern in liquid which contains fluorine compound or choline;
• forming a conformal insulating layer on the processed wiring pattern;
• and
• forming an insulating layer having a planarizing function on the conformal insulating layer by CVD.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a wiring layer on a semiconductor substrate;
• forming a wiring pattern by dry etching the wiring layer using a resist pattern as a mask;
• immersing the wiring pattern in amine containing liquid to remove deposition residues formed during the dry etching;
• processing the wiring pattern having been immersed in the amine containing liquid with fluid not containing amine and being capable of removing deposition residues, said processing including a step of exposing the substrate in oxygen plasma;
• forming a conformal insulating layer on the processed wiring pattern;
• and
• forming an insulating layer having a planarizing function on the conformal insulating layer by CVD.