US 9,040,385 B2 · Mechanisms for cleaning substrate surface for hybrid bonding

Abstract

Embodiments of mechanisms for cleaning a surface of a semiconductor wafer for a hybrid bonding are provided. The method for cleaning a surface of a semiconductor wafer for a hybrid bonding includes providing a semiconductor wafer, and the semiconductor wafer has a conductive pad embedded in an insulating layer. The method also includes performing a plasma process to a surface of the semiconductor wafer, and metal oxide is formed on a surface of the conductive structure. The method further includes performing a cleaning process using a cleaning solution to perform a reduction reaction with the metal oxide, such that metal-hydrogen bonds are formed on the surface of the conductive structure. The method further includes transferring the semiconductor wafer to a bonding chamber under vacuum for hybrid bonding. Embodiments of mechanisms for a hybrid bonding and a integrated system are also provided.

Claims20

Dependent claims

A method for cleaning a surface of a semiconductor wafer for hybrid bonding, comprising:

providing a semiconductor wafer, wherein the semiconductor wafer has a conductive pad embedded in an insulating layer and a metal oxide layer formed on a surface of the conductive pad;
performing a plasma process to a surface of the semiconductor wafer;
performing a cleaning process using a cleaning solution to the surface of the semiconductor wafer after the plasma process, wherein the metal oxide layer is reduced and metal-hydrogen bonds are formed on the surface of the conductive pad;
and
transferring the semiconductor wafer to a bonding chamber under vacuum for hybrid bonding.

2 more elements

A hybrid bonding for semiconductor wafers, comprising:

providing a first semiconductor wafer and a second semiconductor wafer, wherein the first semiconductor wafer and the second semiconductor wafer each has a conductive pad embedded in an insulating layer;
performing a plasma process to a surface of the first semiconductor wafer and a surface of the second semiconductor wafer respectively;
performing a cleaning process using a cleaning solution to the surface of the first semiconductor wafer and the surface of the second semiconductor wafer respectively;
and
bonding the first semiconductor wafer to the second semiconductor wafer.

2 more elements

Dependencies are inferred from the claim text.

Mechanisms for cleaning substrate surface for hybrid bonding

Life of this patent

Mechanisms for cleaning substrate surface for hybrid bonding

Life of this patent

Abstract

Claims20