H10W 20/215
Characterised by thin functional layers between the through-semiconductor vias and sidewalls of
Official title: {characterised by thin functional layers between the through-semiconductor vias and sidewalls of the via holes, e.g. barrier layers or adhesion layers}
H10W20/215 (Characterised by thin functional layers between the through-semiconductor vias and sidewalls of) appears on 1 US grants and 7 published applications in this corpus.
Search patents in H10W- Granted patents
- 1
- Published applications
- 7
- Assignees
- 6
- Inventors
- 22
- Latest grant
- 6 Oct 2026
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|---|---|---|
| 2022 | 0 | 1 |
| 2023 | 0 | 0 |
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| 2026 | 1 | 5 |
By publication year. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor structure and preparation method therefor, functional chip, and electronic device30 Apr 2026US 2026/0123394 A1Huawei Technologies Co., Ltd.
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