Semiconductor structure and preparation method therefor, functional chip, and electronic device

A semiconductor structure, comprising:

• a semiconductor layer group, wherein the semiconductor layer group comprises a first dielectric layer, a semiconductor layer, a second dielectric layer, a conductive structure, and an electronic element;
• the semiconductor layer comprises a first surface and a second surface disposed opposite to each other, the first dielectric layer is disposed adjacent to the first surface of the semiconductor layer, and the electronic element is located in the first dielectric layer;
• one end of the conductive structure is located in the first dielectric layer and is electrically connected to the electronic element;
• and the second dielectric layer wraps the conductive structure;
• and
• a third dielectric layer, wherein the third dielectric layer is disposed adjacent to the second surface of the semiconductor layer;
• and one end of the conductive structure away from the electronic element passes through the semiconductor layer and the third dielectric layer, and an end face of the conductive structure away from the electronic element is exposed in the third dielectric layer, wherein
• the second dielectric layer comprises a first subpart and a second subpart, the first subpart is located between the third dielectric layer and the conductive structure, and the second subpart is located between the semiconductor layer and the conductive structure;
• and a thickness of the first subpart is less than a thickness of the second subpart.

A functional chip, comprising at least one semiconductor structure, wherein the at least one semiconductor structure comprises:

• a semiconductor layer group, wherein the semiconductor layer group comprises a first dielectric layer, a semiconductor layer, a second dielectric layer, a conductive structure, and an electronic element;
• the semiconductor layer comprises a first surface and a second surface disposed opposite to each other, the first dielectric layer is disposed adjacent to the first surface of the semiconductor layer, and the electronic element is located in the first dielectric layer;
• one end of the conductive structure is located in the first dielectric layer and is electrically connected to the electronic element;
• and the second dielectric layer wraps the conductive structure;
• and
• a third dielectric layer, wherein the third dielectric layer is disposed adjacent to the second surface of the semiconductor layer;
• and one end of the conductive structure away from the electronic element passes through the semiconductor layer and the third dielectric layer, and an end face of the conductive structure away from the electronic element is exposed in the third dielectric layer, wherein
• the second dielectric layer comprises a first subpart and a second subpart, the first subpart is located between the third dielectric layer and the conductive structure, and the second subpart is located between the semiconductor layer and the conductive structure;
• and a thickness of the first subpart is less than a thickness of the second subpart.