Semiconductor device and manufacturing method
AssigneeFujitsu Limited
InventorNaoya OKAMOTO
Life of this patent
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Abstract
A semiconductor device includes a substrate having a first surface, a second surface, and an opening; a semiconductor device layer having a third surface and a fourth surface; a heat transfer member; source electrodes disposed on a fourth surface; and electrically conductive vias that penetrate the semiconductor device layer and a diamond layer to electrically connect the source electrodes to a metal layer. The heat transfer member includes the diamond layer and the metal layer, the diamond layer covers a bottom surface and an inner wall surface of the opening, and the metal layer is disposed on the diamond layer.
Claims12
A semiconductor device comprising:
- a substrate having a first surface and a second surface, the second surface being opposite to the first surface, the substrate having an opening formed from the first surface toward the second surface;
- a semiconductor device layer having a third surface facing the second surface;
- a heat transfer member disposed in the opening, the heat transfer member being configured to transfer heat generated by the semiconductor device layer to the first surface;
- source electrodes disposed on a fourth surface, the semiconductor device layer having the third surface and the fourth surface, the fourth surface being disposed opposite to the third surface;
- and
- electrically conductive vias penetrating the semiconductor device layer and a diamond layer to electrically connect the source electrodes to a metal layer,
- wherein the heat transfer member includes the diamond layer and the metal layer, the diamond layer covering a bottom surface and an inner wall surface of the opening, and the metal layer is disposed on the diamond layer.
A method of manufacturing a semiconductor device, the method comprising:
- forming a semiconductor device layer on a substrate, the substrate having a first surface and a second surface opposite to the first surface, the semiconductor device layer having a third surface facing the second surface;
- forming an opening from the first surface of the substrate toward the second surface of the substrate;
- forming a heat transfer member in the opening, the heat transfer member being configured to transfer heat generated by the semiconductor device layer to the first surface;
- forming source electrodes disposed on a fourth surface, the semiconductor device layer having the third surface and the fourth surface, the fourth surface being disposed opposite to the third surface;
- and
- forming electrically conductive vias that penetrate the semiconductor device layer and a diamond layer to electrically connect the source electrodes to a metal layer,
- wherein the forming of the heat transfer member includes forming of the diamond layer that covers a bottom surface and an inner wall surface of the opening, and forming of the metal layer on the diamond layer.
Dependencies are inferred from the claim text.