H10P 95/92
Formation of n- or p-type semiconductors
Official title: {Formation of n- or p-type semiconductors, e.g. doping of graphene}
H10P95/92 (Formation of n- or p-type semiconductors) appears on 75 US grants and 87 published applications in this corpus.
Search patents in H10P- Granted patents
- 75
- Published applications
- 87
- Assignees
- 64
- Inventors
- 198
- Latest grant
- 7 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 1 |
| 2004 | 1 | 1 |
| 2005 | 0 | 4 |
| 2006 | 1 | 3 |
| 2007 | 1 | 1 |
| 2008 | 2 | 0 |
| 2009 | 1 | 2 |
| 2010 | 0 | 5 |
| 2011 | 1 | 4 |
| 2012 | 3 | 3 |
| 2013 | 3 | 1 |
| 2014 | 2 | 5 |
| 2015 | 7 | 6 |
| 2016 | 5 | 6 |
| 2017 | 8 | 10 |
| 2018 | 8 | 7 |
| 2019 | 7 | 5 |
| 2020 | 7 | 2 |
| 2021 | 1 | 2 |
| 2022 | 2 | 6 |
| 2023 | 4 | 4 |
| 2024 | 5 | 3 |
| 2025 | 0 | 4 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Image sensing device and methods of manufacturing the same7 Jul 2026US 12,677,488 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Large-area/wafer-scale CMOS-compatible 2D-material intercalation doping tools, processes, and methods, including intercalation doping of synthesized and patterned graphene14 Apr 2026US 12,604,687 B2Destination 2D Inc.
- Method of providing an air- and/or moisture-barrier coating on a two-dimensional material24 Dec 2024US 12,178,139 B2Paragraf Limited
- Method of making cell regions of integrated circuits22 Oct 2024US 12,124,785 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Cell regions of integrated circuits and methods of making same27 Aug 2024US 12,073,163 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Image sensing device and methods of manufacturing the same8 Oct 2026US 2026/0314089 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Large-area/wafer-scale cmos-compatible 2d-material intercalation doping tools, processes, and methods, including intercalation doping of synthesized and patterned graphene18 Sep 2025US 2025/0293048 A1Destination 2D Inc.
- Atomic scale fabrication of diamond quantum computers29 May 2025US 2025/0174460 A1Quantum Brilliance Pty Ltd
- Transistor and method for manufacturing same10 Apr 2025US 2025/0120145 A1Microchip Technology Incorporated
- Method of making cell regions of integrated circuits30 Jan 2025US 2025/0036846 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Manufacturing method for diamond semiconductor device44US 5,514,603 ASony Corporation · 1996
- Nanosheet field-effect transistors including a two-dimensional semiconducting material35US 10,388,732 B1Globalfoundries Inc. · 2019
- Method of fabricating heavily doped region in double-diffused source MOSFET (LDMOS) transistor21US 8,455,340 B2Volterra Semiconductor Corporation · 2013
- Heavily doped region in double-diffused source MOSFET (LDMOS) transistor and a method of fabricating the same20US 7,999,318 B2Volterra Semiconductor Corporation · 2011
- Plasma etching of diamond surfaces17US 10,011,491 B2Element Six Technologies Limited · 2018