Transistor and method for manufacturing same

A method of manufacturing a transistor, the method comprising:

• providing a substrate;
• forming a drain layer within the substrate at a first side of the substrate;
• forming a first well implant within the substrate at a second side of the substrate, the first well implant having a first implant depth;
• forming a second well implant within the substrate at the second side of the substrate, the second well implant having a second implant depth, wherein the second implant depth is greater than the first implant depth;
• forming a third well implant within the substrate at the second side of the substrate, the third well implant having a third implant depth, wherein the third implant depth is greater than the second implant depth;
• and
• forming a gate at the second side of the substrate, wherein the gate overlaps the first well implant by a first distance, the gate overlaps the second well implant by a second distance and the gate overlaps the third well implant by a third distance.