Manufacturing method for diamond semiconductor device

Abstract

A process of forming a semiconductor which allows n type doping to be applied to a diamond semiconductor layer is carried out so as to form a diamond semiconductor layer on a substrate, forming a layer of SiO.sub.2 over the diamond semiconductor layer and forming a resist pattern (14) over the SiO.sub.2 layer. Etching processing of the SiO.sub.2 layer via the resist pattern is carried out. Then, the exposed diamond layer is subjected to doping process under the following conditions; N.sub.2 =30.sub.SCCM', 1.33 Pa, 100.degree. C., microwave 850 W (2.45 GHz), RF bias 0 W, pulse duty ratio 1:2, a pulse type supply being used for microwave irradiation. Damage to the material by this process imparts high density, doping to the diamond layer. High saturation doping is possible according to this process.

Dependencies are inferred from the claim text.