H10P 95/40
Treatments of semiconductor bodies to modify their internal properties
Official title: Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
H10P95/40 (Treatments of semiconductor bodies to modify their internal properties) appears on 376 US grants and 348 published applications in this corpus.
Search patents in H10P- Granted patents
- 376
- Published applications
- 348
- Assignees
- 185
- Inventors
- 829
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 4 | 0 |
| 1979 | 1 | 0 |
| 1980 | 3 | 0 |
| 1981 | 2 | 0 |
| 1982 | 3 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 2 | 0 |
| 1986 | 3 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 3 | 0 |
| 1991 | 3 | 0 |
| 1992 | 3 | 0 |
| 1993 | 5 | 0 |
| 1994 | 2 | 0 |
| 1995 | 4 | 0 |
| 1996 | 3 | 0 |
| 1997 | 2 | 0 |
| 1998 | 6 | 0 |
| 1999 | 4 | 0 |
| 2000 | 11 | 0 |
| 2001 | 4 | 3 |
| 2002 | 8 | 4 |
| 2003 | 6 | 9 |
| 2004 | 5 | 7 |
| 2005 | 7 | 9 |
| 2006 | 4 | 5 |
| 2007 | 2 | 13 |
| 2008 | 10 | 6 |
| 2009 | 8 | 15 |
| 2010 | 7 | 8 |
| 2011 | 3 | 10 |
| 2012 | 9 | 12 |
| 2013 | 13 | 8 |
| 2014 | 16 | 23 |
| 2015 | 16 | 31 |
| 2016 | 35 | 37 |
| 2017 | 29 | 28 |
| 2018 | 20 | 18 |
| 2019 | 19 | 14 |
| 2020 | 16 | 20 |
| 2021 | 19 | 16 |
| 2022 | 10 | 10 |
| 2023 | 9 | 17 |
| 2024 | 11 | 10 |
| 2025 | 12 | 9 |
| 2026 | 6 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Processing method of bonded wafer25 Aug 2026US 12,721,072 B2Disco Corporation
- Detachable temporary substrate compatible with very high temperatures and process for transferring a working layer from the substrate28 Apr 2026US 12,615,998 B2Soitec
- Method for manufacturing group III nitride semiconductor substrate14 Apr 2026US 12,604,680 B2Sumco Corporation
- Method for producing a semiconductor structure comprising an interface region including agglomerates7 Apr 2026US 12,598,923 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Semiconductor device31 Mar 2026US 12,593,478 B2Fuji Electric Co., Ltd.
- Carrier comprising a charge-trapping layer, composite substrate comprising such a carrier and associated production methods13 Aug 2026US 2026/0239940 A1
- Method for producing a semiconductor structure comprising an interface region including agglomerates6 Aug 2026US 2026/0231696 A1Commissariat à I' énergie atomique et aux énergies alternatives
- Method for stressing the box by creep25 Jun 2026US 2026/0182316 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Method for Altering the Carrier Concentration of a Two-Dimensional Electron Gas25 Jun 2026US 2026/0182317 A1National Chung Shan Institute of Science and Technology
- Method for producing a component11 Jun 2026US 2026/0165096 A1Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
Most cited
By later US patents
- Method for producing semiconductor substrate513US 5,854,123 ACanon Kabushiki Kaisha · 1998
- High performance gaas devices and method497US 5,436,499 ASpire Corporation · 1995
- Process for fabricating thin film transistor433US 5,529,937 ASemiconductor Energy Laboratory Co.Ltd. · 1996
- Electronic device with recovery layer proximate to active layer199US 5,081,513 AXerox Corporation · 1992
- Gettering technique for silicon-on-insulator wafers155US 6,083,324 ASilicon Genesis Corporation · 2000