Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorMotoyoshi Kubouchi
Life of this patent
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Abstract
Provided is a semiconductor device including: a semiconductor substrate having bulk donors distributed throughout the semiconductor substrate; a high-concentration hydrogen peak provided on the semiconductor substrate and having a hydrogen dose amount of 3×1015/cm2 or more; a high-concentration region including a position overlapping with the high-concentration hydrogen peak in a depth direction of the semiconductor substrate and having a donor concentration higher than a bulk donor concentration; and a lifetime adjustment portion provided at a position overlapping with the high-concentration hydrogen peak in the depth direction and having a carrier lifetime indicating a minimum value.
Claims20
A semiconductor device comprising:
- a semiconductor substrate having bulk donors distributed throughout the semiconductor substrate;
- a high-concentration hydrogen peak provided on the semiconductor substrate and having a hydrogen dose amount of 3×1015/cm2 or more;
- a high-concentration region including a position overlapping with the high-concentration hydrogen peak in a depth direction of the semiconductor substrate and having a donor concentration higher than a bulk donor concentration;
- and
- a lifetime adjustment portion provided at a position overlapping with the high-concentration hydrogen peak in the depth direction and having a carrier lifetime indicating a minimum value.
Dependencies are inferred from the claim text.