H10P 36/20
Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the
Official title: Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body
H10P36/20 (Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the) appears on 415 US grants and 381 published applications in this corpus.
Search patents in H10P- Granted patents
- 415
- Published applications
- 381
- Assignees
- 122
- Inventors
- 684
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 3 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 5 | 0 |
| 1987 | 6 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 4 | 0 |
| 1991 | 3 | 0 |
| 1992 | 5 | 0 |
| 1993 | 3 | 0 |
| 1994 | 4 | 0 |
| 1995 | 8 | 0 |
| 1996 | 9 | 0 |
| 1997 | 5 | 0 |
| 1998 | 5 | 0 |
| 1999 | 10 | 0 |
| 2000 | 10 | 0 |
| 2001 | 19 | 10 |
| 2002 | 21 | 22 |
| 2003 | 32 | 27 |
| 2004 | 17 | 20 |
| 2005 | 10 | 26 |
| 2006 | 12 | 17 |
| 2007 | 17 | 21 |
| 2008 | 6 | 17 |
| 2009 | 10 | 29 |
| 2010 | 18 | 24 |
| 2011 | 16 | 17 |
| 2012 | 14 | 14 |
| 2013 | 16 | 8 |
| 2014 | 11 | 18 |
| 2015 | 14 | 13 |
| 2016 | 18 | 18 |
| 2017 | 11 | 12 |
| 2018 | 15 | 12 |
| 2019 | 12 | 6 |
| 2020 | 8 | 15 |
| 2021 | 10 | 3 |
| 2022 | 4 | 5 |
| 2023 | 4 | 12 |
| 2024 | 1 | 4 |
| 2025 | 6 | 9 |
| 2026 | 5 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Method of forming nondefective zone in silicon single crystal wafer by two stage-heat treatment106US 4,314,595 AVLSI Technology Research Association · 1982
- Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing99US 4,851,358 ADNS Electronic Materials, Inc. · 1989
- Method for manufacturing a semiconductor device and suppressing the generation of bulk microdefects near the substrate surface layer87US 4,931,405 AKabushiki Kaisha Toshiba · 1990
- Semiconductor substrate having a gettering layer76US 5,539,245 AMitsubishi Denki Kabushiki Kaisha · 1996
- Method of making fault-free surface zone in semiconductor devices by step-wise heat treating73US 4,376,657 AVLSI Technology Research Association · 1983