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AssigneeVLSI Technology Research Association
InventorsKazutoshi Nagasawa, Seigo Kishino, Yoshiaki Matsushita, Masaru Kanamori
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In a gettering method for processing semiconductor wafers a semiconductor wafer such as a silicon wafer is first annealed in a non-oxidizing atmosphere, for example, in a nitrogen atmosphere, at a temperature in the range of 950.degree. to 1,300.degree. C., preferably at 1,050.degree. C., for more than 10 minutes, for example for four (4) hours, to diffuse out oxygen near the surfaces of the semiconductor wafer. Then the semiconductor wafer is annealed at a temperature in the range of 600.degree. to 800.degree. C., for example at 650.degree. C., for more than one hour, preferably for 16 hours, to create in the interior of the semiconductor wafer microdefects of high density.
In a method of manufacturing a semiconductor device, a method of forming in a semiconductor wafer denuded zones near the surfaces thereof without creating microdefects but creating in the interior of the semiconductor wafer microdefects capable of gettering, comprising the steps of:
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