Process for manufacturing a monocrystalline silicon semiconductor wafer, and monocrystalline silicon semiconductor wafer

A method for producing a semiconductor wafer of monocrystalline silicon, the method comprising in the following order:

• growing a single crystal of silicon by the Czochralski (CZ) method;
• dividing at least one semiconductor wafer of monocrystalline silicon from the single crystal, wherein the semiconductor wafer consists completely of an N region, in which there are no agglomerates of silicon interstitials or vacancies having a diameter of more than 20 nm, and has an oxygen concentration of not less than 5.3×1017 atoms/cm3 and not more than 5.9×1017 atoms/cm3 and a nitrogen concentration of not more than 1.0×1012 atoms/cm3;
• executing a first rapid thermal annealing (RTA) treatment of the semiconductor wafer at a first temperature in a first temperature range of not less than 750° C. and not more than 1100° C. over a first period of not less than 10 s and not more than 30 s in a first atmosphere of argon and ammonia in a ratio of not less than 1:2 and not more than 1:0.75;
• executing a second RTA treatment of the semiconductor wafer at a second temperature in a second temperature range of not less than 1190° C. and not more than 1280° C. over a second period of not less than 20 s and not more than 35 s in a second atmosphere of argon;
• and
• executing a third RTA treatment of the semiconductor wafer at a third temperature in a third temperature range of not less than 1160° C. and not more than 1180° C. over a third period of not less than 15 s and not more than 25 s in a third atmosphere of argon and ammonia in a ratio of not less than 8:10 and not more than 3:2.