H10P 34/20
Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of
Official title: for inducing a nuclear reaction transmuting chemical elements
H10P34/20 (Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of) appears on 52 US grants and 26 published applications in this corpus.
Search patents in H10P- Granted patents
- 52
- Published applications
- 26
- Assignees
- 27
- Inventors
- 99
- Latest grant
- 13 May 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 5 | 0 |
| 2001 | 2 | 0 |
| 2002 | 2 | 0 |
| 2003 | 1 | 2 |
| 2004 | 1 | 1 |
| 2005 | 3 | 3 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 1 | 1 |
| 2010 | 1 | 3 |
| 2011 | 1 | 0 |
| 2012 | 0 | 0 |
| 2013 | 3 | 1 |
| 2014 | 1 | 1 |
| 2015 | 1 | 2 |
| 2016 | 2 | 1 |
| 2017 | 1 | 0 |
| 2018 | 1 | 2 |
| 2019 | 3 | 0 |
| 2020 | 0 | 4 |
| 2021 | 0 | 0 |
| 2022 | 2 | 0 |
| 2023 | 1 | 1 |
| 2024 | 0 | 1 |
| 2025 | 2 | 2 |
By publication year. Applications have been published since 2001.
Recent patents
- Low resistant contact method and structure13 May 2025US 12,300,729 B2Taiwan Semiconductor Manufacturing Company.Ltd
- WBG and UWBG semiconductor with p- and n-type conductivity and process for making the same25 Feb 2025US 12,237,169 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Photonuclear transmutation doping in gallium-based semiconductor materials10 Jan 2023US 11,551,932 B2The Curators of the University of Missouri
- Low defect nuclear transmutation doping in nitride-based semiconductor materials29 Nov 2022US 11,515,161 B2The Curators of the University of Missouri
- Apparatus and method for neutron transmutation doping of semiconductor wafers15 Feb 2022US 11,250,966 B2Infineon Technologies AG
- Radiation doped semiconductor junctions12 Jun 2025US 2025/0194194 A1The Curators of the University of Missouri
- Methods of Forming WBG and UWBG Semiconductors with P- and N-type Conductivity5 Jun 2025US 2025/0183038 A1The Government of the United States of America, as represented by the Secretary of the Navy
- Thermal Neutron Transmutation Doped Gallium Oxide Semiconductor19 Sep 2024US 2024/0312793 A1
- WBG and UWBG Semiconductor with P- and N-type Conductivity and Process For Making the Same22 Jun 2023US 2023/0197454 A1The Government of the United States of America, as represented by the Secretary of the Navy
- Photonuclear transmutation doping in gallium-based semiconductor materials24 Dec 2020US 2020/0402802 A1The Curators of the University of Missouri
Most cited
By later US patents
- Manufacturing method of semiconductor device84US 6,346,464 B1Kabushiki Kaisha Toshiba · 2002
- Silicon avalanche photodiode array63US 5,021,854 AXsirius Photonics, Inc. · 1991
- Method of making power MOSFET and IGBT with optimized on-resistance and breakdown voltage36US 6,190,970 B1Industrial Technology Research Institute · 2001
- Power MOSFET and IGBT with optimized on-resistance and breakdown voltage35US 6,359,309 B1Industrial Technology Research Institute · 2002
- Devices for detecting and/or imaging single photoelectron30US 5,146,296 AXsirius Photonics, Inc. · 1992