Apparatus and method for neutron transmutation doping of semiconductor wafers

An apparatus for processing a plurality of semiconductor wafers, the

• apparatus comprising:
• a spallation chamber comprising a first end and a second end opposite the first end, wherein the first end comprising an aperture configured to receive a proton beam into the spallation chamber;
• a neutron producing material mounted in the spallation chamber;
• an irradiation chamber coupled to the spallation chamber, the irradiation chamber comprising a first end and a second end opposite the first end, wherein the irradiation chamber comprises a chamber door disposed at the second end and is configured to accommodate the plurality of semiconductor wafers, wherein each of the plurality of semiconductor wafers has a first surface and a second surface opposite the first surface, wherein the plurality of semiconductor wafers are positioned so that the first surface of one semiconductor wafer faces the second surface of another semiconductor wafer and the first surface of each of the plurality of semiconductor wafers faces one of the first end or the second end of the irradiation chamber;
• and
• a neutron moderator disposed between the spallation chamber and the irradiation chamber.