Photonuclear transmutation doping in gallium-based semiconductor materials
AssigneeThe Curators of the University of Missouri
InventorsJae Wan Kwon, Quang Nguyen
Life of this patent
Estimating the term…
Abstract
The present invention relates to various high quality n-type and p-type doped gallium-based semiconductor materials, electronic components incorporating these materials, and processes of producing these materials. In particular, The present invention relates processes to achieve high quality, uniform doping of a whole wafer or a thin layer of gallium-based semiconductor materials for various applications such as a vertical power transistor or diode.
Claims20
A process for producing a doped gallium-based semiconductor material comprising:
- irradiating a gallium-based semiconductor workpiece with gamma rays to effect transmuting at least a portion of Ga in the workpiece to Zn and/or Ge to produce the doped gallium-based semiconductor material.
A semiconductor material comprising:
- a first region comprising a doped gallium-based material;
- and
- a second region comprising an undoped gallium based material or .
A semiconductor material comprising:
- a first region comprising a doped p-type gallium-based material;
- and
- a second region comprising a n-type doped gallium based material
Dependencies are inferred from the claim text.