US 12,237,169 B2Granted

WBG and UWBG semiconductor with p- and n-type conductivity and process for making the same

AssigneeThe Government of the United States of America, as represented by the Secretary of the Navy

InventorsBoris N. Feigelson, Alan G. Jacobs

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Abstract

Methods for efficient doping of wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductors by implantation, and WBG and UWBG semiconductors made using the disclosed methods. A p-type semiconductor region is formed by implanting specified acceptor and donor co-dopant atoms in a predetermined ratio, e.g., two acceptors to one donor (ADA), into the semiconductor lattice. An n-type type semiconductor region is by implanting specified donor and acceptor co-dopant atoms in a predetermined ratio, e.g., two donors to one acceptor (DAD), into the semiconductor lattice. Compensator atoms are also implanted into the lattice to complete formula units in the crystal lattice structure and preserve the stoichiometry of the semiconductor material. The doped material is then annealed to activate the dopants and repair any damage to the lattice that might have occurred during implantation.

Claims14

Dependent claims

A semiconductor material having an area with a predetermined conductivity, comprising:

a doped semiconductor material having an AxBy crystal lattice structure,
the doped semiconductor material having a predefined area that includes
a predetermined implanted dose DaA of a first acceptor impurity aA which substitutes for element A in the AxBy crystal lattice structure and/or a predetermined dose DaB of a second acceptor impurity aB which substitutes for element B in the AxBy crystal lattice structure,
a predetermined implanted dose DdA of a first donor impurity dA which substitutes for element A in the AxBy crystal lattice structure and/or a predetermined dose DdB of a second donor impurity dB which substitutes for element B in the AxBy crystal lattice structure, and
a predetermined implanted dose DA of a compensating impurity A which represents element A in the AxBy crystal lattice structure, a maximum implanted dose DA being determined by the formula
D
A
=
x
⁡
(
D
⁢
a
B
+
D
⁢
d
B
)
y
-
(
D
⁢
a
A
+
D
⁢
d
A
)
;
wherein the first and second acceptor impurities aA and aB and the first and second donor impurities dA and dB produces a doped area having a predetermined conductivity in the material;
and
wherein the compensating impurity A causes formation of complete AxBy formula units in the crystal lattice structure so as to maintain a stoichiometry of the semiconductor material relative to the material's starting stoichiometry.

35 more elements

A semiconductor material having an area with a predetermined conductivity, comprising:

a doped semiconductor material having an (AxB(1-x))yCz crystal lattice structure;
the doped semiconductor material having a predefined area that includes
a predetermined implanted dose DaAB of a first acceptor impurity aAB which substitutes for at least one of element A and element B in the (AxB(1-x))yCz crystal lattice structure and/or a predetermined dose DaC of a second acceptor impurity aC which substitutes for element C in the (AxB(1-x))yCz crystal lattice structure;
a predetermined implanted dose DdAB of a first donor impurity dAB which substitutes for at least one of element A and element B in the (AxB(1-x))yCz crystal lattice structure and/or a predetermined dose DdC of a second donor impurity dC which substitutes for element C in the (AxB(1-x))yCz crystal lattice structure;
and
a predetermined implanted dose DAB of a compensating impurity A which represents element A in the (AxB(1-x))yCz crystal lattice structure and/or a compensating impurity B which represents element B in the (AxB(1-x))yCz crystal lattice structure, a maximum dose DAB being determined by the formula
D
A
⁢
B
=
y
⁡
(
D
⁢
a
C
+
D
⁢
d
C
)
z
-
(
D
⁢
a
A
⁢
B
+
D
⁢
d
A
⁢
B
)
;
wherein the implantation of the first and second acceptor impurities and the first and second donor impurities produces a doped area having a predetermined conductivity in the material;
and
wherein the implantation of the compensating impurity atoms causes formation of complete (AxB(1-x))yCz formula units in the crystal lattice structure so as to maintain a stoichiometry of the semiconductor material relative to the material's starting stoichiometry.

42 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/714,204Filed 6 Apr 2022 · us provisional application
Priority: 9 Apr 2021
Published: US 2023/0197454 A122 Jun 2023
Granted: 25 Feb 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10P 30/21
Into semiconductor materials, e.g. for doping: of electrically active species
H10D 62/80
Semiconductor bodies, or regions thereof, of devices having potential barriers: characterised by the materials
H10D 62/8503
Being Group III-V materials, e.g. GaAs: nitride Group III-V materials, e.g. AlN or GaN
H10D 62/854
Being Group III-V materials, e.g. GaAs: further characterised by the dopants