Photonuclear transmutation doping in gallium-based semiconductor materials
AssigneeThe Curators of the University of Missouri
InventorsJae Wan Kwon, Quang Nguyen
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Abstract
The present invention relates to various high quality n-type and p-type doped gallium-based semiconductor materials, electronic components incorporating these materials, and processes of producing these materials. In particular, The present invention relates processes to achieve high quality, uniform doping of a whole wafer or a thin layer of gallium-based semiconductor materials for various applications such as a vertical power transistor or diode.
Claims17
A process for producing a doped gallium-based semiconductor material comprising:
- irradiating a gallium-based semiconductor workpiece with gamma rays in a photonuclear reaction to effect transmuting at least a portion of Ga in the workpiece to Zn and/or Ge to produce the doped gallium-based semiconductor material,
- wherein the gallium-based semiconductor workpiece comprises at least one other component selected from group consisting of N, O, Sb, In, and combinations thereof.
A process for producing a doped gallium-based semiconductor material comprising:
- irradiating a gallium-based semiconductor workpiece with gamma rays in a photonuclear reaction to effect transmuting at least a portion of Ga in the workpiece to Zn and/or Ge to produce the doped gallium-based semiconductor material,
- wherein the gallium-based semiconductor workpiece comprises gallium oxide.
Dependencies are inferred from the claim text.