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US 11,515,161 B2Granted
Low defect nuclear transmutation doping in nitride-based semiconductor materials
AssigneeThe Curators of the University of Missouri
InventorsJae Wan Kwon, John Gahl, John Brockman
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Abstract
Doped nitride-based semiconductor materials and methods of producing these materials are described herein.
Claims19
A method for producing a doped nitride-based semiconductor material comprising:
- emitting an initial stream of neutron irradiation comprising thermal flux, epithermal flux, and fast neutron flux toward a nitride-based semiconductor workpiece in a nuclear reactor;
- reducing a density of fast neutron flux and/or thermal neutron flux in the initial stream of neutron irradiation to produce a modulated stream of neutron irradiation, wherein the modulated stream of neutron irradiation has:
- a ratio of epithermal flux density to fast neutron flux density that is greater than a ratio of epithermal flux density to fast neutron flux density in the initial stream of neutron irradiation and/or
- a ratio of epithermal flux density to thermal neutron flux density that is greater than a ratio of epithermal flux density to thermal neutron flux density in the initial stream of neutron irradiation;
- and
- bombarding the workpiece with the modulated stream of neutron irradiation to effect transmuting a proportion of a first element in the workpiece to a second element to produce the doped nitride-based semiconductor material.
3 more elements
A method for producing a doped nitride-based semiconductor material comprising:
- bombarding a nitride-based semiconductor workpiece with a stream of neutron irradiation in a nuclear reactor to effect transmuting a proportion of a first element in the workpiece to a second element to produce the doped nitride-based semiconductor material, wherein the neutron irradiation comprises a thermal flux, epithermal flux, and fast neutron flux;
- and wherein the stream of neutron irradiation reaching the workpiece has a ratio of epithermal neutron flux density to fast neutron flux density that is about 1:1000 or greater.
A method for producing a doped nitride-based semiconductor material comprising:
- positioning a nitride-based semiconductor workpiece in a zone of a nuclear reactor that has a preferentially greater ratio of an epithermal flux density to a fast neutron flux density based on a map of relative flux densities in the reactor;
- and
- bombarding the workpiece with a stream of neutron irradiation in the zone of the nuclear reactor to effect transmuting a proportion of a first element in the workpiece to a second element to produce the doped nitride-based semiconductor material.
Dependencies are inferred from the claim text.