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  1. Technology classes
  2. /H · Electricity
  3. /H10 · Semiconductor devices
  4. /H10P · Generic processes or apparatus for the manufacture or treatment of devices covered
  5. /H10P 14/00 · Formation of materials
  6. /H10P 14/60 · Formation of materials: of insulating materials
  7. /H10P 14/69 · Inorganic materials
  8. /H10P 14/6906 · Containing at least one metal element and not containing oxygen
  9. /H10P 14/6907
H10P 14/6907

Characterised by the metal

Official title: {characterised by the metal}

H10P14/6907 (Characterised by the metal) appears on 0 US grants and 4 published applications in this corpus.

Search patents in H10P

Where it sits

  1. HElectricity
  2. H10Semiconductor devices
  3. H10PGeneric processes or apparatus for the manufacture or treatment of devices covered
  4. H10P 14/00Formation of materials
  5. H10P 14/60Formation of materials: of insulating materials
  6. H10P 14/69Inorganic materials
  7. H10P 14/6906Containing at least one metal element and not containing oxygen
  8. H10P 14/6907Characterised by the metal
  9. 7subgroups, listed below
Granted patents
0
Published applications
4
Assignees
4
Inventors
15

Filings by year

Granted patentsPublished applications
H10P 14/6907: granted patents and published applications per publication year
YearGranted patentsPublished applications
202604

2026

By publication year. 2026 runs to 8 Oct.

Subgroups

Granted patents
  • H10P 14/6908The material containing aluminium0
  • H10P 14/6909The material containing hafnium0
  • H10P 14/691The material containing tantalum0
  • H10P 14/6911The material containing titanium0
  • H10P 14/6912The material containing zirconium0
  • H10P 14/6913The material containing at least one rare earth metal element0
  • H10P 14/6914The material containing two or more metal elements0

Recent patents

No granted patents in this class yet.

  • Method of forming a dielectric layer10 Sep 2026US 2026/0271636 A1ASM IP Holding B. V.
  • Tantalum carbide coating material and compound semiconductor growth device10 Sep 2026US 2026/0271639 A1Shin-Etsu Chemical Co., Ltd.
  • Methods of forming a structure including a metal hardmask4 Jun 2026US 2026/0157127 A1ASM IP Holding B. V.
  • Method of manufacturing oxide thin film1 Jan 2026US 2026/0002253 A1Korea Advanced Institute of Science and Technology

Most cited

By later US patents

No patent in this class has been cited by a later US patent yet.

Top assignees

Documents
  • AIASM IP Holding B. V.2
  • Korea Advanced Institute of Science and Technology1
  • Samsung Electronics Co., Ltd.1
  • SEShin-Etsu Chemical Co., Ltd.1

Often classified with

  • C23CCoating metallic material3
  • C04BLime, magnesia1
  • G03FPhotomechanical production of textured or patterned surfaces1
  • H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by1

Documents that also carry the other class.

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