Tantalum carbide coating material and compound semiconductor growth device
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsNaoya MIYAJIMA, Akihiro HIRATE, Waichi YAMAMURA
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Abstract
A tantalum carbide-coated material including a substrate and a tantalum carbide coating film covering at least part of the substrate, in which the number of crack intersections per unit area on a surface of the tantalum carbide coating film is 25 or less per cm2. A compound semiconductor growth apparatus according to the present invention uses the tantalum carbide-coated material. A tantalum carbide-coated material in which a tantalum carbide coating film is less likely to delaminate in a high-temperature corrosive environment; and a compound semiconductor growth apparatus using the tantalum carbide-coated material.
Claims7
A tantalum carbide-coated material, comprising:
- a substrate;
- and
- a tantalum carbide coating film covering at least part of the substrate,
- wherein a number of crack intersections per unit area on a surface of the tantalum carbide coating film is 25 or less per cm2.
Dependencies are inferred from the claim text.