H10N 59/00
Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic
Official title: Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 (MRAM devices H10B61/00)
H10N59/00 (Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic) appears on 461 US grants and 480 published applications in this corpus.
Search patents in H10N- Granted patents
- 461
- Published applications
- 480
- Assignees
- 167
- Inventors
- 844
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 6 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 3 | 3 |
| 2003 | 2 | 3 |
| 2004 | 3 | 5 |
| 2005 | 2 | 1 |
| 2006 | 3 | 9 |
| 2007 | 2 | 6 |
| 2008 | 3 | 9 |
| 2009 | 7 | 14 |
| 2010 | 8 | 7 |
| 2011 | 7 | 15 |
| 2012 | 17 | 18 |
| 2013 | 11 | 13 |
| 2014 | 17 | 22 |
| 2015 | 19 | 13 |
| 2016 | 30 | 35 |
| 2017 | 29 | 35 |
| 2018 | 35 | 28 |
| 2019 | 36 | 39 |
| 2020 | 31 | 39 |
| 2021 | 35 | 29 |
| 2022 | 30 | 35 |
| 2023 | 24 | 37 |
| 2024 | 20 | 27 |
| 2025 | 31 | 24 |
| 2026 | 15 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Packaged current sensor integrated circuit8 Sep 2026US 12,733,512 B2Allegro MicroSystem, LLC
- Methods of manufacturing a magnetic field sensor1 Sep 2026US 12,727,389 B2Everspin Technologies, Inc.
- Semiconductor device and method of making the same14 Jul 2026US 12,685,029 B2Samsung Electronics Co., Ltd.
- Magnetic sensor device, and method of producing same14 Jul 2026US 12,685,031 B2Melexis Technologies SA
- Tunnel magnetoresistive multi-turn sensor16 Jun 2026US 12,656,422 B2Analog Devices International Unlimited Company
- Tunnel magnetoresistive multi-turn sensor17 Sep 2026US 2026/0276753 A1Analog Devices International Unlimited Company
- Light detection element17 Sep 2026US 2026/0282755 A1TDK Corporation
- Sensor device, production method for a sensor device, and operation method for a sensor device30 Jul 2026US 2026/0223602 A1
- Electron spin wave multiplexing device2 Jul 2026US 2026/0190866 A1Tohoku University
- Neuron device based on magnetic tunnel junction, and neural network apparatus25 Jun 2026US 2026/0181911 A1Institute of Microelectronics, Chinese Academy of Sciences
Most cited
By later US patents
- Hall sensor with integrated pole pieces129US 4,772,929 ASprague Electric Company · 1988
- Hall effect device with epitaxal layer resistive means for providing temperature independent sensitivity112US 4,760,285 AHoneywell Inc. · 1988
- Hall effect device formed in an epitaxial layer of silicon for sensing magnetic fields parallel to the epitaxial layer100US 5,572,058 AHoneywell Inc. · 1996
- Majority- and minority-gate logic schemes based on magneto-electric devices97US 9,276,040 B1Board of Regents of the University of Nebraska · 2016
- Packaged integrated circuit with magnetic flux concentrator90US 5,883,567 AAnalog Devices, Inc. · 1999