Semiconductor device and method of making the same
AssigneeSamsung Electronics Co., Ltd.
InventorsRoman Chepulskyy, Dmytro Apalkov
Life of this patent
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Abstract
A magnetic junction includes a free layer including iron (Fe), the free layer has a first planar surface and a first side surface crossing the first planar surface; a first cap layer on the first planar surface of the free layer; and a protection layer on the first cap layer, wherein the protection layer is 8 angstroms (Å) or less in thickness. The protection layer may include one or more elements selected from the group consisting of Ta, Rh, Nb, C, Os, Ir, W, Re, Si, Ru, Ti, and Pt.
Claims21
A magnetic junction comprising:
- a free layer having a first planar surface and a first side surface crossing the first planar surface;
- a first cap layer on the first planar surface of the free layer;
- a protection layer on the first cap layer;
- and
- a side protection layer on the first side surface of the free layer,
- wherein an element of the side protection layer has a higher affinity to the free layer than an element of the first cap layer, and
- wherein the element of the side protection layer is directly on the first side surface of the free layer.
A magnetic junction comprising:
- a free layer having a first planar surface and a first side surface crossing the first planar surface;
- a first cap layer on the first planar surface of the free layer;
- and
- a side protection layer directly on the first side surface of the free layer,
- wherein the side protection layer comprises one or more elements in an elemental form selected from the group consisting of Ta, Rh, Nb, C, Os, Ir, W, Re, Si, Ru, Ti, and Pt, and
- the one or more elements of the side protection layer have a higher affinity to the free layer than an element of the first cap layer.
A method of manufacturing a magnetic junction, the method comprising:
- depositing a free layer, the free layer having a first planar surface and a first side surface crossing the first planar surface;
- depositing a first cap layer on the first planar surface of the free layer;
- and
- depositing a protection layer on the first cap layer,
- wherein the protection layer is 8 angstroms (Å) or less in thickness, and
- wherein an element of the protection layer has a higher affinity to the free layer than an element of the first cap layer and is directly on the first side surface of the free layer.
Dependencies are inferred from the claim text.