US 9,276,040 B1 · Majority- and minority-gate logic schemes based on magneto-electric devices

Abstract

Majority and minority logic can be implemented by voltage controlled switching of magneto-electric layers of magneto electric magnetic tunnel junction (ME-MTJ) devices. A ME-MTJ device includes an exchange bias-controlled switching element and a pinned ferromagnetic layer on an antiferromagnetic layer. In one case, the switching element includes a magneto electric (ME) layer on a free ferromagnetic (FM) layer, and is separated from the pinned FM layer by an insulator. To implement a majority or minority logic gate a single ME-MTJ device may be used where the device is provided with three electrodes contacting the ME layer in an overlaying relationship with the ME layer. The orientation of the pinned FM layer indicates whether the gate is a majority or a minority logic gate.

Claims19

Dependent claims

A magneto-electric (ME) magnetic tunnel junction (MTJ)-based Boolean device, comprising:

an exchange bias controlled switch on a pinned ferromagnetic layer;
a first input electrode connected to the exchange bias controlled switch;
a second input electrode connected to the exchange bias controlled switch;
and
a third input electrode connected to the exchange bias controlled switch,
wherein the first input electrode applies a first voltage to a ME layer of the exchange bias controlled switch, the second input electrode applies a second voltage to the ME layer, and the third input electrode applies a third voltage to the ME layer to output a function result of the Boolean device at the pinned ferromagnetic layer.

3 more elements

Dependencies are inferred from the claim text.

Majority- and minority-gate logic schemes based on magneto-electric devices

Life of this patent

Majority- and minority-gate logic schemes based on magneto-electric devices

Life of this patent

Abstract

Claims19