H10K 10/482
The igfet comprising multiple separately-addressable gate electrodes
Official title: {the IGFET comprising multiple separately-addressable gate electrodes}
H10K10/482 (The igfet comprising multiple separately-addressable gate electrodes) appears on 109 US grants and 128 published applications in this corpus.
Search patents in H10K- Granted patents
- 109
- Published applications
- 128
- Assignees
- 77
- Inventors
- 277
- Latest grant
- 24 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 1 |
| 2003 | 1 | 0 |
| 2004 | 0 | 5 |
| 2005 | 4 | 4 |
| 2006 | 1 | 1 |
| 2007 | 1 | 6 |
| 2008 | 4 | 5 |
| 2009 | 6 | 6 |
| 2010 | 2 | 6 |
| 2011 | 6 | 4 |
| 2012 | 3 | 9 |
| 2013 | 5 | 6 |
| 2014 | 4 | 6 |
| 2015 | 7 | 5 |
| 2016 | 5 | 3 |
| 2017 | 6 | 10 |
| 2018 | 6 | 11 |
| 2019 | 11 | 6 |
| 2020 | 8 | 8 |
| 2021 | 4 | 6 |
| 2022 | 5 | 9 |
| 2023 | 4 | 5 |
| 2024 | 8 | 6 |
| 2025 | 5 | 0 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing a effect transistor using carbon nanotubes and a field effect transistor24 Mar 2026US 12,588,348 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Tunable gaussian heterojunction transistors, fabricating methods and applications of same2 Sep 2025US 12,406,179 B2Northwestern University
- Liquid crystal display device8 Jul 2025US 12,353,107 B2Semiconductor Energy Laboratory Co.Ltd.
- Dual plate OLET displays3 Jun 2025US 12,324,302 B2Hewlett-Packard Development Company, L. P.
- Organic thin film transistor and method for producing same27 May 2025US 12,317,665 B2Flexora GmbH
- Display device and method of manufacturing display device12 Dec 2024US 2024/0414957 A1Samsung Display Co., Ltd.
- Organic light-emitting diode display device24 Oct 2024US 2024/0357867 A1Samsung Display Co., Ltd.
- Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor22 Aug 2024US 2024/0284688 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Quantum component4 Jul 2024US 2024/0224817 A1
- Liquid crystal display device23 May 2024US 2024/0168349 A1Semiconductor Energy Laboratory Co.Ltd.
Most cited
By later US patents
- Tri-gate devices and methods of fabrication426US 6,858,478 B2Intel Corporation · 2005
- Tri-gate devices and methods of fabrication117US 7,358,121 B2Intel Corporation · 2008
- Method for improving performance of organic semiconductors in bottom electrode structure95US 6,335,539 B12002
- Tri-gate devices and methods of fabrication86US 7,005,366 B2Intel Corporation · 2006
- Multi-gate carbon nano-tube transistors53US 6,972,467 B2Intel Corporation · 2005