H10K 10/481
Characterised by the gate conductors
Official title: {characterised by the gate conductors}
H10K10/481 (Characterised by the gate conductors) appears on 360 US grants and 425 published applications in this corpus.
Search patents in H10K- Granted patents
- 360
- Published applications
- 425
- Assignees
- 188
- Inventors
- 774
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 2 |
| 2003 | 1 | 1 |
| 2004 | 1 | 6 |
| 2005 | 5 | 12 |
| 2006 | 1 | 9 |
| 2007 | 5 | 21 |
| 2008 | 9 | 25 |
| 2009 | 21 | 25 |
| 2010 | 22 | 19 |
| 2011 | 22 | 13 |
| 2012 | 10 | 17 |
| 2013 | 16 | 15 |
| 2014 | 15 | 20 |
| 2015 | 17 | 25 |
| 2016 | 27 | 35 |
| 2017 | 32 | 29 |
| 2018 | 30 | 34 |
| 2019 | 28 | 16 |
| 2020 | 21 | 27 |
| 2021 | 15 | 21 |
| 2022 | 14 | 19 |
| 2023 | 14 | 12 |
| 2024 | 14 | 15 |
| 2025 | 14 | 6 |
| 2026 | 4 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Photosensitive ring oscillator preparation method and artificial retina thereof25 Aug 2026US 12,719,455 B2
- Gas sensor based on thiophene-based high performance organic semiconducting materials with large surface area vertical device design16 Jun 2026US 12,656,304 B2Corning Incorporated
- Transistor device12 May 2026US 12,628,489 B2Infineon Technologies Austria AG
- Method of manufacturing a effect transistor using carbon nanotubes and a field effect transistor24 Mar 2026US 12,588,348 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Electrically gated nanostructure devices7 Oct 2025US 12,439,763 B2Lawrence Livermore National Security, LLC
- Helical graphene nanoribbon for organic electrochemical transistors and conformable electrode array28 May 2026US 2026/0150477 A1Cornell University
- Compound, polymer compound, photosensitive surface treatment agent, laminate, substrate for pattern formation, transistor, pattern formation method, and transistor manufacturing method18 Dec 2025US 2025/0386722 A1Nikon Corporation
- Photosensitive ring oscillator preparation method and artificial retina thereof20 Nov 2025US 2025/0357918 A1Institute of Physics, Chinese Academy of Sciences
- Sensor with porous wicking layer8 May 2025US 2025/0146043 A1
- Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor8 May 2025US 2025/0151347 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Tri-gate devices and methods of fabrication426US 6,858,478 B2Intel Corporation · 2005
- Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device fabrication285US 6,842,657 B1E Ink Corporation · 2005
- Tri-gate devices and methods of fabrication117US 7,358,121 B2Intel Corporation · 2008
- Nanotube-on-gate FET structures and applications115US 7,294,877 B2Nantero, Inc. · 2007
- Method for improving performance of organic semiconductors in bottom electrode structure95US 6,335,539 B12002