Electrically gated nanostructure devices

A gated nanostructure device comprising:

• a first substrate having a dielectric layer;
• a source electrode and a drain electrode, wherein at least one of the source electrode and the drain electrode is on the dielectric layer of the first substrate;
• a thick film comprising conducting carbon nanotubes between the source electrode and the drain electrode, wherein each carbon nanotube has an inner channel;
• and
• a gate electrode above the dielectric layer of the first substrate, wherein the gate electrode modulates an electric current through the conducting carbon nanotubes between the source electrode and the drain electrode throughout a thickness of the thick film;
• wherein the conducting carbon nanotubes comprise an exposed portion, which is exposed to an outside environment, and the inner channels of the conducting carbon nanotubes are at least partially aligned along a direction that is substantially parallel to a direction between the source electrode and the drain electrode.