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US 7,005,366 B2Granted
Tri-gate devices and methods of fabrication
AssigneeIntel Corporation
InventorsRobert S. Chau, Brian S. Doyle, Jack Kavalieros, Douglas Barlage, Suman Datta, Scott A. Hareland
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Abstract
The present invention is a semiconductor device comprising a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body.
Claims5
A method of forming a semiconductor device comprising:
- forming a semiconductor body having a top surface and laterally opposite sidewalls on a substrate;
- growing a first dielectric layer over said laterally opposite sidewalls of said semiconductor body and on the top surface of said semiconductor body;
- removing said first dielectric layer from said top surface of said semiconductor body and leaving said first dielectric layer on said sidewalls of said semiconductor body;
- forming a second dielectric layer directly adjacent to said first dielectric layer on said sidewalls of said semiconductor body and forming said second dielectric layer on said top surface of said semiconductor body;
- and
- forming a gate electrode on said second dielectric on said top surface of said semiconductor body and adjacent to said second dielectric on said laterally opposite sidewalls of said semiconductor body.
3 more elements
Dependencies are inferred from the claim text.