Dual plate OLET displays
AssigneeHewlett-Packard Development Company, L.P.
InventorsHsing-Hung Hsieh, Kuan-Ting Wu, Chi Hao Chang
Life of this patent
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Abstract
An example dual plate Organic Light-Emitting Field-Effect Transistor (OLET) display device includes a first plate device having a first substrate; a gate layer adjacent to the first substrate; and a dielectric layer adjacent to the gate layer. A second plate device is connected to the first plate device. The second plate device includes a second substrate; a source/drain layer adjacent to the second substrate; and a stacked active organic layer adjacent to the source/drain layer. The first plate device and the second plate device are to be independently fabricated and joined together to position the stacked active organic layer adjacent to the dielectric layer.
Claims20
A dual plate Organic Light-Emitting Field-Effect Transistor (OLET) display device comprising:
- a first plate device comprising:
- a first substrate;
- a gate layer adjacent to the first substrate;
- and
- a dielectric layer adjacent to the gate layer;
- a second plate device connected to the first plate device, wherein the second plate device comprises:
- a second substrate;
- a source/drain layer adjacent to the second substrate;
- and
- a stacked active organic layer adjacent to the source/drain layer,
- wherein the first plate device and the second plate device are to be independently fabricated and joined together to position the stacked active organic layer adjacent to the dielectric layer, and
- wherein the source/drain layer comprises:
- a first side comprising a first planar surface contacting the second substrate;
- and
- a second side opposite to the first side, wherein an entirety of the second side comprises a second planar surface contacting the stacked active organic layer.
A dual plate Organic Light-Emitting Field-Effect Transistor (OLET) display device comprising:
- a first substrate;
- a gate layer contacting the first substrate;
- a dielectric layer contacting the gate layer;
- a stacked active organic layer contacting the dielectric layer;
- a pair of source electrodes contacting the stacked active organic layer;
- a drain electrode contacting the stacked active organic layer, wherein the in electrode is aligned and spaced apart from the pair of source electrodes;
- and
- a second substrate contacting the pair of source electrodes, the drain electrode, and a portion of the stacked active organic layer,
- wherein the first substrate, the gate layer, and the dielectric layer are fabricated together prior to connecting the dielectric layer to the stacked active organic layer.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first Organic Light-Emitting Field-Effect Transistor (OLET) display device;
- forming a second OLET display device independently of the first OLET display device;
- and
- attaching the first OLET display device to the second OLET display device.
Dependencies are inferred from the claim text.