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US 12,317,665 B2Granted
Organic thin film transistor and method for producing same
AssigneeFlexora GmbH
InventorsHans Kleemann, Seongae Park, Jörn Vahland
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Abstract
An organic thin film transistor (OTFT), in particular thin-film field-effect transistor (OFET), that includes a substrate, a source electrode, a drain electrode, a gate electrode arranged in a top gate arrangement, and an organic semiconductor functional layer. The source electrode, the drain electrode, and the gate electrode are arranged in a coplanar layer structure. The organic thin-film transistor has an intermediate layer for the capacitive decoupling of the gate electrode from the source electrode and/or from the drain electrode.
Claims20
An organic thin film transistor comprising:
- a substrate, a source electrode, a drain electrode, a gate electrode arranged in a top gate arrangement, and an organic semiconductor functional layer, wherein the source electrode, the drain electrode, and the gate electrode are all arranged in a coplanar layer structure on one side of the organic semiconductor functional layer, and
- wherein the organic thin film transistor comprises an intermediate layer configured for capacitive decoupling of the gate electrode from the source electrode and/or from the drain electrode, and the intermediate layer is arranged on the gate electrode and extends between the gate electrode and both of the drain electrode and the source electrode, which extend partly over the intermediate layer or the gate electrode,
- wherein the intermediate layer comprises a thickness in a range of 500 nm to 5 μm,
- wherein each of the source electrode and the drain electrode have a Z-shaped cross section, and
- wherein the intermediate layer is arranged above the gate electrode and is embodied without an interruption.
2 more elements
Dependencies are inferred from the claim text.