H10F 39/103
The at least one element covered by h10f30/00 having potential barriers
Official title: {the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors}
H10F39/103 (The at least one element covered by h10f30/00 having potential barriers) appears on 976 US grants and 841 published applications in this corpus.
Search patents in H10F- Granted patents
- 976
- Published applications
- 841
- Assignees
- 469
- Inventors
- 2,073
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 3 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 6 | 0 |
| 1981 | 3 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 7 | 0 |
| 1985 | 5 | 0 |
| 1986 | 5 | 0 |
| 1987 | 6 | 0 |
| 1988 | 11 | 0 |
| 1989 | 16 | 0 |
| 1990 | 17 | 0 |
| 1991 | 29 | 0 |
| 1992 | 27 | 0 |
| 1993 | 15 | 0 |
| 1994 | 17 | 0 |
| 1995 | 14 | 0 |
| 1996 | 10 | 0 |
| 1997 | 11 | 0 |
| 1998 | 14 | 0 |
| 1999 | 15 | 0 |
| 2000 | 15 | 0 |
| 2001 | 11 | 6 |
| 2002 | 15 | 14 |
| 2003 | 7 | 4 |
| 2004 | 14 | 10 |
| 2005 | 5 | 11 |
| 2006 | 8 | 20 |
| 2007 | 14 | 13 |
| 2008 | 6 | 13 |
| 2009 | 3 | 10 |
| 2010 | 11 | 20 |
| 2011 | 17 | 16 |
| 2012 | 8 | 11 |
| 2013 | 10 | 9 |
| 2014 | 20 | 34 |
| 2015 | 30 | 45 |
| 2016 | 41 | 62 |
| 2017 | 56 | 66 |
| 2018 | 56 | 67 |
| 2019 | 64 | 49 |
| 2020 | 55 | 68 |
| 2021 | 67 | 78 |
| 2022 | 49 | 57 |
| 2023 | 44 | 46 |
| 2024 | 42 | 44 |
| 2025 | 41 | 34 |
| 2026 | 25 | 34 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Photodetector with improved detection result22 Sep 2026US 12,745,486 B2Senorics GmbH
- TFT optical sensor apparatus and system with enhanced dynamic range8 Sep 2026US 12,733,269 B2Japan Display Inc.
- On-chip integration of indium tin oxide (ITO) layers for ohmic contact to bond pads1 Sep 2026US 12,727,261 B2Ams AG
- Ranging device25 Aug 2026US 12,717,033 B2Sony Semiconductor Solutions Corporation
- Detector substrate for use in a charged particle multi-beam assessment tool11 Aug 2026US 12,706,272 B2ASML Netherlands B. V.
- Semiconductor light reception1 Oct 2026US 2026/0304969 A1Illumina, Inc.
- Two-dimensional photosensor and manufacturing method of two-dimensional photosensor17 Sep 2026US 2026/0282566 A1Kepler, Ltd.
- Displays with Pinhole Openings17 Sep 2026US 2026/0282567 A1Apple Inc.
- 3d stacked apd/spad for visible light operating at high speed10 Sep 2026US 2026/0271412 A1Shenzhen Adaps Photonics Technology Co. LTD.
- Avalanche photodiode with a diffused extension layer3 Sep 2026US 2026/0262281 A1Texas Instruments Incorporated
Most cited
By later US patents
- Semiconductor structure having an optical signal path in a substrate and method for forming the same177US 5,987,196 AMicron Technology, Inc. · 1999
- Wavelength division multiplexed optical communication transmitters142US 5,394,489 AAT&T Corp. · 1995
- Storage pixel sensor and array with compression136US 6,512,544 B1Foveon, Inc. · 2003
- Three-dimensional optical-electronic integrated circuit device with raised sections111US 5,357,122 ASony Corporation · 1994
- Single photon avalanche diode for CMOS circuits111US 9,178,100 B2STMicroelectronics (Research & Development) Limited · 2015