On-chip integration of indium tin oxide (ITO) layers for ohmic contact to bond pads

An apparatus comprising:

• an optical device;
• an electrically conductive bond pad;
• a multi-layer stack of electrically conductive materials on the bond pad, the stack including a first ITO layer as a top layer;
• and
• a second ITO layer disposed at least partially on the optical device and on the first ITO layer,
• wherein the optical device is a photodetector and wherein the second ITO layer covers the photodetector, the apparatus further including:
• a second electrically conductive bond pad;
• a second multi-layer stack of different electrically conductive materials on the second electrically conductive bond pad, the second stack including a top layer comprising a first ITO layer;
• an electrode layer disposed on a side of the optical device opposite that of the second ITO layer and connected to the first ITO layer of the second stack.