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US 5,987,196 AGranted
Semiconductor structure having an optical signal path in a substrate and method for forming the same
AssigneeMicron Technology, Inc.
InventorWendell P. Noble
Life of this patent
Estimating the term…
Abstract
A semiconductor layer is disposed on an opaque substrate, and first and second circuits are respectively disposed in the semiconductor layer or in the substrate. An optical signal path is disposed in the substrate beneath the semiconductor layer and is coupled to the first and second circuits.
Claims79
A semiconductor structure, comprising:
- a semiconductor substrate;
- a semiconductor layer disposed on the substrate, the semiconductor layer having a surface;
- a first circuit disposed in the substrate or the semiconductor layer;
- a second circuit disposed in the substrate or the semiconductor layer;
- and
- a path disposed in the substrate and underlying the semiconductor layer, the path operable to carry an optical signal between the first and second circuits, the path comprising:
- a first section that is disposed in a plane that is substantially parallel to the surface, that has first and second regions, and that is operable to carry the optical signal between the first and second regions;
- a second section that is substantially perpendicular to the surface, is disposed between the first region of the first section and the first circuit, and that is operable to carry the optical signal between the first region and the first circuit;
- and
- a third section that is substantially perpendicular to the surface, is disposed between the second region of the first section and the second circuit, and that is operable to carry the optical signal between the second region and the second circuit.
7 more elements
A semiconductor structure, comprising:
- a semiconductor substrate;
- a semiconductor layer disposed on the substrate, the semiconductor layer having a surface;
- a first circuit disposed in the substrate or the semiconductor layer, the first circuit being operable to generate a first electrical signal;
- a second circuit disposed in the substrate or the semiconductor layer;
- and
- a path disposed in the substrate and underlying the semiconductor layer, the path operable to carry an optical signal between the first and second circuits, the path comprising:
- a first section that is disposed in a plane that is substantially parallel to the surface, that has first and second regions, and that is operable to carry the optical signal between the first and second regions,
- a first converter that is disposed in optical communication with the first region of the first section and that is operable to convert the second electrical signal into the optical signal,
- a second converter that is disposed in optical communication with the second region of the first section and that is operable to convert the optical signal carried by the first section into a second electrical signal,
- a second section that is substantially perpendicular to the surface, is disposed between the first converter and the first circuit, and that is operable to carry the first electrical signal between the first converter and the first circuit, and
- a third section that is substantially perpendicular to the surface, is disposed between the second converter and the second circuit, and that is operable to carry the second electrical signal between the second converter and the second circuit.
8 more elements
A semiconductor structure, comprising:
- a semiconductor substrate;
- a semiconductor layer disposed on the substrate;
- a first optical path disposed in the substrate and underneath the semiconductor layer, the first optical path having first and second regions;
- circuitry disposed in the semiconductor layer and having first and second circuit portions;
- a first signal path disposed in the semiconductor layer between the first region and the first circuit portion;
- and
- a second signal path disposed in the semiconductor layer between the second region and the second circuit portion.
4 more elements
A semiconductor structure, comprising:
- a semiconductor substrate;
- a semiconductor layer disposed on the substrate;
- a first optical path disposed in the substrate and underneath the semiconductor layer, the first optical path having first and second regions;
- circuitry disposed in the semiconductor layer and having first and second circuit portions;
- a first signal path disposed between the first region and the first circuit portion, the first signal path being disposed in the substrate and in the semiconductor layer;
- and
- a second signal path disposed between the second region and the second circuit portion, the second signal path being disposed in the substrate and in the semiconductor layer.
4 more elements
A semiconductor structure, comprising:
- a substrate;
- a trench disposed in the substrate and having first and second regions;
- a first optically transmissive material disposed in the trench;
- a semiconductor layer disposed on the substrate over the first optically transmissive material;
- first and second circuits disposed in the semiconductor layer;
- a first signal path disposed between the first region and the first circuit;
- a second signal path disposed between the second region and the second circuit;
- an optical receiver disposed in the first circuit;
- an optical transmitter disposed in the second circuit;
- wherein the first region of the trench comprises a first angled surface;
- wherein the second region of the trench comprises a second angled surface;
- wherein the first signal path comprises a second optically transmissive material that is disposed between the first angled surface and the optical receiver;
- and
- wherein the second signal path comprises a third optically transmissive material that is disposed between the second angled surface and the optical transmitter.
11 more elements
A semiconductor structure, comprising:
- a substrate;
- a semiconductor layer disposed on the substrate;
- a first circuit disposed in the semiconductor layer and operable to generate a first electrical signal;
- a second circuit disposed in the semiconductor layer and operable to receive a second electrical signal;
- an optical waveguide disposed in the substrate and having first and second regions, the optical waveguide operable to carry the first optical signal from the first region to the second region;
- a first diode disposed in the substrate and in optical communication with the first region of the optical waveguide, the first diode operable to convert the first electrical signal into the first optical signal;
- a second diode disposed in the substrate and in optical communication with the second region of the optical waveguide, the second diode operable to convert the first optical signal into the second electrical signal;
- a first conductor coupled to the first diode and the first circuit and operable to carry the first electrical signal from the first circuit to the first diode;
- and
- a second conductor coupled to the second diode and the second circuit and operable to carry the second electrical signal from the second diode to the second circuit.
7 more elements
A semiconductor structure, comprising:
- a substrate;
- an optical waveguide disposed in the substrate and having first and second ends;
- a first diode disposed in the substrate adjacent to the first end of the optical waveguide;
- a second diode disposed in the substrate adjacent to the second end of the optical waveguide;
- a semiconductor layer disposed on the substrate;
- first and second circuits disposed in the semiconductor layer;
- a first conductive path coupled to the first diode and the first circuit;
- and
- a second conductive path coupled to the second diode and the second circuit.
6 more elements
A semiconductor structure, comprising:
- an opaque substrate;
- an optical path disposed in the substrate and having first and second path regions;
- a semiconductor layer disposed on the substrate and over the optical path;
- a first circuit disposed in the semiconductor layer and operable to generate a first optical signal;
- a second circuit disposed in the semiconductor layer and operable to receive the first optical signal;
- a first optical coupler disposed in optical communication with the first path region and operable to direct the first optical signal from the first circuit to the second region;
- and
- a second optical coupler disposed in optical communication with the second path region and operable to direct the first optical signal from the first optical coupler to the second circuit.
5 more elements
A semiconductor structure, comprising:
- a substrate;
- a trench formed in the substrate and having first and second trench regions;
- a semiconductor layer disposed on the substrate and over the trench;
- a first circuit disposed in the semiconductor layer and operable to generate a first optical signal;
- a second circuit disposed in the semiconductor layer and operable to receive the first optical signal;
- a first optically transmissive material disposed in the trench and operable to carry the first optical signal from the first trench region to the second trench region;
- a first optical coupler disposed in the first trench region and operable to direct the first optical signal from the first circuit to the first optically transmissive material;
- and
- a second optical coupler disposed in the second trench region and operable to direct the first optical signal from the first optically transmissive material to the second circuit.
6 more elements
A semiconductor structure, comprising:
- a semiconductor substrate;
- a semiconductor layer disposed on the substrate;
- first and second circuits disposed in the semiconductor layer;
- a first optical path disposed in the substrate and underlying the semiconductor layer;
- a second optical path disposed between the first circuit and the first optical path;
- a third optical path disposed between the second circuit and the first optical path;
- a first optical coupler disposed between the first and second optical paths;
- and
- second optical coupler disposed between the first and third optical paths.
6 more elements
A semiconductor structure, comprising:
- a substrate;
- a trench formed in the substrate and having first and second trench regions;
- a semiconductor layer disposed on the substrate and overlying the trench;
- first and second circuits disposed in the semiconductor layer;
- a first optically transmissive material disposed in the trench;
- a first optical coupler disposed in the first trench region;
- a first optical path disposed between the first optical coupler and the first circuit;
- a second optical coupler disposed in the second trench region;
- and
- a second optical path disposed between the second optical coupler and the second circuit.
7 more elements
A memory device, comprising:
- a substrate;
- a semiconductor layer disposed on the substrate;
- one or more other layers disposed on the semiconductor layer;
- address, data, and command busses disposed in one of the other or semiconductor layers;
- an array of memory cells arranged in rows and columns and disposed in the semiconductor layer;
- an address decoder disposed in the semiconductor layer and coupled to the address bus and to the array;
- a read/write circuit disposed in the semiconductor layer and coupled to the address decoder and to the array;
- a data input/output circuit disposed in the semiconductor layer and coupled to the data bus and to said read/write circuit;
- and
- a control circuit disposed in the semiconductor layer and coupled to the command bus, to the address decoder, to the read/write circuit, and to the data input/output circuit;
- and
- an optical signal path disposed in the substrate and beneath the semiconductor layer, the optical signal path coupled to at least two of the following portions of the memory device:
- the address bus, command bus, data bus, array, address decoder, read/write circuit, data input/output circuit, and control circuit.
10 more elements
A memory device, comprising:
- a substrate;
- a semiconductor layer disposed on the substrate;
- one or more other layers disposed on the semiconductor layer;
- address, data, and command busses disposed in one of the other or semiconductor layers;
- an array of memory cells arranged in rows and columns and disposed in the semiconductor layer;
- an address decoder disposed in the semiconductor layer and coupled to the address bus and to the array;
- a read/write circuit disposed in the semiconductor layer and coupled to the address decoder and to the array;
- a data input/output circuit disposed in the semiconductor layer and coupled to the data bus and to said read/write circuit;
- a control circuit disposed in the semiconductor layer and coupled to the command bus, to the address decoder, to the read/write circuit, and to the data input/output circuit;
- an optical path disposed in the substrate and underlying the semiconductor layer, the optical path having first and second path regions, the optical path operable to carry an optical signal from the first path region to the second path region;
- a first optical coupler disposed in optical communication with the first path region and operable to direct the optical signal to the second region from one of the following:
- the address bus, command bus, data bus, array, address decoder, read/write circuit, data input/output circuit, and control circuit;
- and
- a second optical coupler disposed in optical communication with the second path region and operable to direct the optical signal from the first optical coupler to another one of the following:
- the address bus, command bus, data bus, array, address decoder, read/write circuit, data input/output circuit, and control circuit the second circuit.
12 more elements
An electronic system, comprising:
- a data input device;
- a data output device;
- and
- computing circuitry coupled to the data input and output devices, the computing circuitry including a memory device that includes,
- a substrate,
- a semiconductor layer disposed on the substrate,
- one or more other layers disposed on the semiconductor layer,
- address, data, and command busses disposed in one of the other or semiconductor layers,
- an array of memory cells arranged in rows and columns and disposed in the semiconductor layer,
- an address decoder disposed in the semiconductor layer and coupled to the address bus and to the array,
- a read/write circuit disposed in the semiconductor layer and coupled to the address decoder and to the array,
- a data input/output circuit disposed in the semiconductor layer and coupled to the data bus and to said read/write circuit,
- a control circuit disposed in the semiconductor layer and coupled to the command bus, to the address decoder, to the read/write circuit, and to the data input/output circuit, and
- an optical signal path disposed in the substrate and beneath the semiconductor layer, the optical signal path coupled to at least two of the following portions of the memory device:
- the address bus, command bus, data bus, array, address decoder, read/write circuit, data input/output circuit, and control circuit.
12 more elements
An electronic system, comprising:
- a data input device;
- a data output device;
- and
- computing circuitry coupled to the data input and output devices, the computing circuitry including a memory device that includes,
- a substrate,
- a semiconductor layer disposed on the substrate,
- one or more other layers disposed on the semiconductor layer, address, data, and command busses disposed in one of the other or semiconductor layers,
- an array of memory cells arranged in rows and columns and disposed in the semiconductor layer,
- an address decoder disposed in the semiconductor layer and coupled to the address bus and to the array,
- a read/write circuit disposed in the semiconductor layer and coupled to the address decoder and to the array,
- a data input/output circuit disposed in the semiconductor layer and coupled to the data bus and to said read/write circuit,
- a control circuit disposed in the semiconductor layer and coupled to the command bus, to the address decoder, to the read/write circuit, and to the data input/output circuit,
- an optical path disposed in the substrate underlying the semiconductor layer, the optical path having first and second path regions, the optical path operable to carry an optical signal from the first path region to the second path region;
- a first optical coupler disposed in optical communication with the first path region and operable to direct the optical signal to the second region from one of the following:
- the address bus, command bus, data bus, array, address decoder, read/write circuit, data input/output circuit, and control circuit, and
- a second optical coupler disposed in optical communication with the second path region and operable to direct the optical signal from the first optical coupler to another one of the following:
- the address bus, command bus, data bus, array, address decoder, read/write circuit, data input/output circuit, and control circuit.
14 more elements
A method, comprising:
- forming a trench in a semiconductor substrate;
- forming an optically transmissive path within the trench by:
- lining the trench with a first optically transmissive material;
- filling the lined trench with a second optically transmissive material;
- recessing the second optically transmissive material;
- and
- capping the recessed second optically transmissive material with the first optically transmissive material;
- forming a photo diode in a first region of the trench;
- forming a light-emitting diode in a second region of the trench;
- forming a semiconductor layer on the substrate;
- forming first and second circuits in the semiconductor layer;
- electrically coupling the first circuit to the photo diode;
- and
- electrically coupling the second circuit to the light-emitting diode.
11 more elements
A method, comprising:
- forming a trench in a semiconductor substrate;
- forming an optically transmissive path within the trench by:
- lining the trench with a reflective material;
- filling the lined trench with a first optically transmissive material,
- after filling the lined trench, filling the trench with a second optically transmissive material,
- recessing the second optically transmissive material, and
- capping the recessed second optically transmissive material with the first optically transmissive material;
- forming a photo diode in a first region of the trench;
- forming a light-emitting diode in a second region of the trench;
- forming a semiconductor layer on the substrate;
- forming first and second circuits in the semiconductor layer;
- electrically coupling the first circuit to the photo diode;
- and
- electrically coupling the second circuit to the light-emitting diode.
11 more elements
A method, comprising:
- forming a trench in a semiconductor substrate;
- forming an optically transmissive path within the trench by:
- lining the trench with a refractory metal;
- filling the lined trench with a first optically transmissive material,
- after filling the lined trench, filling the trench with a second optically transmissive material,
- recessing the second optically transmissive material, and
- capping the recessed second optically transmissive material with the first optically transmissive material;
- forming a photo diode in a first region of the trench;
- forming a light-emitting diode in a second region of the trench;
- forming a semiconductor layer on the substrate;
- forming first and second circuits in the semiconductor layer;
- electrically coupling the first circuit to the photo diode;
- and
- electrically coupling the second circuit to the light-emitting diode.
11 more elements
A method, comprising:
- forming a trench in a silicon semiconductor substrate;
- forming an optically transmissive path within the trench;
- forming a photo diode in a first region of the trench, the photo diode being formed by:
- exposing the substrate in a region of the trench,
- growing epitaxial silicon in the region, and
- doping the epitaxial silicon;
- forming a light-emitting diode in a second region of the trench, the light-emitting diode being formed by:
- exposing the substrate in a region of the trench,
- growing epitaxial silicon in the region, and
- doping the epitaxial silicon;
- forming a semiconductor layer on the substrate;
- forming first and second circuits in the semiconductor layer;
- electrically coupling the first circuit to the photo diode;
- and
- electrically coupling the second circuit to the light-emitting diode.
12 more elements
A method, comprising:
- forming a trench in a silicon semiconductor substrate;
- forming an optically transmissive path within the trench;
- forming a photo diode in a first region of the trench;
- forming a light-emitting diode in a second region of the trench;
- forming a semiconductor layer on the substrate by:
- recessing portions of the substrate,
- filling the recessed portions with an insulator,
- growing a layer of epitaxial silicon on the insulator and on exposed portions of the substrate;
- forming first and second circuits in the semiconductor layer;
- electrically coupling the first circuit to the photo diode;
- and
- electrically coupling the second circuit to the light-emitting diode.
9 more elements
A method, comprising:
- forming a trench in a semiconductor substrate;
- forming isolation regions in the semiconductor layer;
- forming an optically transmissive path within the trench;
- forming a photo diode in a first region of the trench;
- forming a light-emitting diode in a second region of the trench;
- forming a semiconductor layer on the substrate;
- forming first and second circuits in the semiconductor layer;
- electrically coupling the first circuit to the photo diode by:
- forming in a respective one of the isolation regions an opening that exposes the respective diode;
- and
- filling the opening with an electrically conductive material;
- electrically coupling the second circuit to the light-emitting diode by:
- forming in a respective one of the isolation regions an opening that exposes the respective diode;
- and
- filling the opening with an electrically conductive material.
12 more elements
A method, comprising:
- forming a trench in a silicon semiconductor substrate;
- forming an optically transmissive path within the trench;
- forming a photo diode in a first region of the trench;
- forming a light-emitting diode in a second region of the trench;
- forming a semiconductor layer on the substrate by:
- recessing portions of the substrate,
- filling the recessed portions with an insulator, and
- growing a layer of epitaxial silicon on the insulator and on exposed portions of the substrate;
- forming first and second circuits in the semiconductor layer by forming the first and second circuits in substantial alignment with respective ones of the insulator-filled recessed portions of the substrate;
- electrically coupling the first circuit to the photo diode;
- and
- electrically coupling the second circuit to the light-emitting diode.
9 more elements
A method, comprising:
- forming in a substrate a trench having first and second end walls that are angled at approximately 45.degree. with respect to the trench;
- forming an optical waveguide in the trench;
- forming a semiconductor layer on the substrate;
- forming in the semiconductor layer a first circuit that is aligned with the first end wall at substantially a right angle with respect to the trench;
- and
- forming in the semiconductor layer a second circuit that is aligned with the second end wall at substantially a right angle with respect to the trench.
3 more elements
Dependencies are inferred from the claim text.