3d stacked apd/spad for visible light operating at high speed
AssigneeShenzhen Adaps Photonics Technology Co. LTD.
InventorsChing-Ying LU, Yangsen KANG, Shuang LI
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AssigneeShenzhen Adaps Photonics Technology Co. LTD.
InventorsChing-Ying LU, Yangsen KANG, Shuang LI
Estimating the term…
In an embodiment, the present disclosure provides a backside illumination (BSI) photodiode device comprising a backside with a plurality of microlenses coupled to it, including a first microlens and a second microlens. The device includes a first doped region of p-type material within a first thickness of the backside, and a first sidewall with a first deep trench isolation (DTI) region. A frontside comprises a first sub-pixel region aligned against the first microlens and a second sub-pixel region aligned against the second microlens, each containing shaped p-type and n-type layers. An interconnect layer includes electrodes coupled to the shaped layers. The device may further include an application specific integrated circuit (ASIC) coupled to the electrodes, and can function as an avalanche photodiode or single photon avalanche diode with a thickness less than 3 um between the frontside and backside. There are other embodiments as well.
An optical receiver system comprising:
An optical receiver system comprising:
A photodetector array system comprising:
Dependencies are inferred from the claim text.